• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.57-62
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• 1997

Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.801-806
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• 1998

$Eu^{3+}$ -doped $Y_2$$O_3$ phosphors has been prepared by a polymerized complex method and investigated their powder and luminescence properties. They were compared with phosphors prepared by a solid state reac-thion method. The phosphors synthesized have been characterized by X-ray diffraction low-voltage lu-minescent emission spectroscopy etc. Under low-voltage electron excitation $Eu^{3+}$-doped $Y_2$$O_3$ exhibited a strong narrow-band red emission peaking at 612nm. On the other hand the critical value for concentration quenching of sample prepared by the polymerized complex method fired at $1400^{\circ}C$ is x=0.05 for $(Y_{1-x}Eu_x__2O_3$ The emission intensity of phosphors prepared by the polymerized complex method was higher than that of phosphors prepared by the solid state reaction method.

• Journal of Powder Materials
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• v.15 no.2
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• pp.136-141
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• 2008

The mechanochemical process were employed to prepare the red phosphors (Y,Gd)$BO_3:Eu^{3+}$. The main factors affecting particle size, particle distribution, and luminescent properties of the product were investigated in details. Particles sized around 200-600 nm are formed after intensive milling. The phosphors were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectrum. Results revealed that phosphors with different morphology, small particle size and high luminescence intensity could be obtained by mechanochemical process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.146-150
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• 2010

Because the plasma display panel has used red, green and blue(RGB) phosphors, it has suffer from two intrinsic problems; 1) the cell defect due to the lack of binding force between phosphor particles and 2) mis-discharge because of difference of electrical characteristics among RGB phosphors. In order to control the mechanical and electrical properties of RGB phosphors, frit with $ZnOB_2O_3-SiO_2-Al_2O_3$ system was added to RGB phosphor as sintering additive. The mechanical properties were increased by the amount of frit. The amount of frit under 5 wt% rarely affected dielectric constant. However, there was the limit of amount because of decreasing optical properties seriously; over 3 wt% in red, over 10 wt% in green and blue.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.163.1-163
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• 2002

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.370-376
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• 1998

The powder preparation of Zinc-Silicate phosphors compound was studied by hydrothermal reaction starting from the precursor which prepared by spray pyrolysis method. This process protect including of impuritied from crushing process and Mineralizing in hydrothermal reactions. Using spray pyrolysis precursor, ${\alpha}-Zn_2SiO_4$ powder was prepared by the hydrothermal reaction under $250^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.48-53
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• 2001

The crystal structure of ZnS fabricated by gas-liquid phase reaction was refined by the Rietveld program using X-ray diffraction data. The R-weighted pattern (R$\sub$wp/) of ZnS powder was 10.85%. The fraction of HCP phase was closely related with extra amount of H$_2$S gas. The lattice parameters and crystalline size were changed by the relative ratio of multi-phase. The luminescence property of ZnS:Cu, Al green phosphors prepared by conventional methods was good in the range of 91∼94% and 150∼190${\AA}$, respectively. According to the maximum entropy electron density(MEED) methods, any defects in (001) plane of cubic phase were not found. We suggest that both the Rietveld and maximum entropy density methods may be useful tools for studying luminescence mechanism of other phosphors materials.