• Title/Summary/Keyword: pixel circuit

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An OLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel OLED·Driving TFT (n-채널 OLED 구동 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 OLED 화소회로)

  • Chung, Hoon-Ju
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.15 no.3
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    • pp.205-210
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    • 2022
  • A novel OLED pixel circuit is proposed in this paper that uses only n-type thin-film transistors(TFTs) to improve the luminance non-uniformity of the AMOLED display caused by the threshold voltage variation of an OLED driving TFT. The proposed OLED pixel circuit is composed of 6 n-channel TFTs and 2 capacitors. The operation of the proposed OLED pixel circuit consists of the capacitor initializing period, threshold voltage sensing period of an OLED·driving TFT, image data voltage writing period, and OLED·emitting period. As a result of SmartSpice simulation, when the threshold voltage of·OLED·driving TFT varies from 1.2 V to 1.8 V, the proposed OLED pixel circuit has a maximum current error of 5.18 % at IOLED = 1 nA. And, when the OLED cathode voltage rises by 0.1 V, the proposed OLED pixel circuit has very little change in the OLED current compared to the conventional OLED pixel circuit. Therefore, the proposed pixel circuit exhibits superior compensation characteristics for the threshold voltage variation of an OLED driving TFT and the rise of the OLED cathode voltage compared to the conventional OLED pixel circuit.

Averaging Current Adjustment Technique for Reducing Pixel Resistance Variation in a Bolometer-Type Uncooled Infrared Image Sensor

  • Kim, Sang-Hwan;Choi, Byoung-Soo;Lee, Jimin;Lee, Junwoo;Park, Jae-Hyoun;Lee, Kyoung-Il;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.27 no.6
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    • pp.357-361
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    • 2018
  • This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

A New AMOLED Pixel Circuit Employing a-Si:H TFTs for High Aperture Ratio

  • Shin, Hee-Sun;Lee, Jae-Hoon;Jung, Sang-Hoon;Kim, Chang-Yeon;Han, Min-Koo
    • Journal of Information Display
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    • v.6 no.2
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    • pp.12-15
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    • 2005
  • We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

  • Lee, Jae Pyo;Hwang, Jun Young;Bae, Byung Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.594-600
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    • 2014
  • A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

Design of Low Power LTPS AMOLED Panel and Pixel Compensation Circuit with High Aperture Ratio (고 개구율 화소보상회로를 갖는 저전력 LTPS AMOLED 패널 설계)

  • Kang, Hong-Seok;Woo, Doo-Hyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.10
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    • pp.34-41
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    • 2010
  • We proposed the new pixel compensation circuit with high aperture ratio and the driving method for the large-area, low-power AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but good mobility and stability. To lower the error rate of the pixel circuit and to improve the aperture ratio for bottom emission method, we simplified the pixel compensation circuit. Because the proposed pixel compensation circuit with high aperture ratio has very low contrast ratio for conventional driving methods, we proposed the new driving method and circuit for high contrast ratio. Black data insertion was introduced to improve the characteristics for moving images. The pixel circuit was designed for 19.6" WXGA bottom-emission AMOLED panel, and the average aperture ratio of the pixel circuit is improved from 33.0% to 41.9%. For the TFT's $V_{TH}$ variation of ${\pm}0.2\;V$, the non-uniformity and contrast ratio of the designed panel was estimated under 6% and over 100000:1 respectively.

Design of Luma and Chroma Sub-pixel Interpolator for H.264 Motion Estimation (H.264 움직임 예측을 위한 Luma와 Chroma 부화소 보간기 설계)

  • Lee, Seon-Young;Cho, Kyeong-Soon
    • The KIPS Transactions:PartA
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    • v.18A no.6
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    • pp.249-254
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    • 2011
  • This paper describes an efficient design of the interpolation circuit to generate the luma and chroma sub-pixels for H.264 motion estimation. The circuit based on the proposed architecture does not require any input data buffering and processes the horizontal, vertical and diagonal sub-pixel interpolations in parallel. The performance of the circuit is further improved by simultaneously processing the 1/2-pixel and 1/4-pixel interpolations for luma components and the 1/8-pixel interpolations for chroma components. In order to reduce the circuit size, we store the intermediate data required to process all the interpolations in parallel in the internal SRAM's instead of registers. We described the proposed circuit at register transfer level and verified its operation on FPGA board. We also synthesized the gate-level circuit using 130nm CMOS standard cell library. It consists of 20,674 gates and has the maximum operating frequency of 244MHz. The total number of SPSRAM bits used in our circuit is 3,232. The size of our circuit (including logic gates and SRAM's) is smaller than others and the performance is still comparable to them.

Pixel Circuit with High Immunity to the Degradation of TFTs and OLED for AMOLED Displays

  • Lin, Chih-Lung;Tu, Chun-Da
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.473-476
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    • 2008
  • A simple voltage compensation pixel circuit for AMOLED is produced using low temperature polycrystalline silicon (LTPS) technology. Its operation is verified by AIM-SPICE. Simulation results show that the pixel circuit has high immunity to variation of LTPS-TFT and reduces the drop in luminance due to the degradation of the OLED.

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Dual Mode AMOLED Pixel Circuit

  • Bae, Byung-Seong;Son, Yong-Duck;Jang, Jin;Lee, Ki-Yong;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1082-1085
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    • 2006
  • We proposed dual mode pixel circuit in AMOLED (active matrix organic light emitting device). After light emitting period of OLED, we used it as a photo sensor. We measured photo current of OLED and simulated the proposed pixel circuit to verify it's function of dual mode, that is lighting and sensing.

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Characterization of Active Pixel Switch Readout Circuit by SPICE Simulation (능동픽셀센서 구동회로의 SPICE 모사 분석)

  • Nam, Hyoung-Gin
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.2 s.19
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    • pp.49-52
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    • 2007
  • Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

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Circuit Design of Fingerprint Authentication for Smart Card Application (스마트카드의 인증을 위한 지문인식 회로 설계)

  • 정승민;김정태
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.249-252
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    • 2003
  • This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog to comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an exective isolation strategy for removing noise and signal coupling of each sensor pixel. The 128$\times$144 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

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