• Carbon letters
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• v.6 no.4
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• pp.243-247
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• 2005

Plasma polymerization of allylamine subsequently after plasma pre-treatment was conducted on the activated carbon fibers (ACFs) for the immobilization of amine groups in the surface of ACFs. The change of structural properties of ACFs with respect to different polymerization conditions was investigated through BET method. The change of surface morphologies of ACFs with respect to different plasma polymerization power was also studied through AFM. It was found that the structural properties such as specific surface area and micropore volume could be optimized under certain plasma deposition conditions. It was reckoned that treatment and deposition showed adverse effect on plasma polymerization, in which the former developed the micro-structures of the ACFs and the latter tended to block the micro pores. The Fourier transform infrared spectroscopy (FTIR) revealed that the poly(allylamine) was successfully immobilized on the surface of ACFs and the amount of the deposited polymer layer was related to the plasma polymerization power. SEM results showed that the plasma deposited polymer layer were small and homogenously distributed. The size and the distribution of particles deposited were closely related to the plasma polymerization power, too.

• Textile Coloration and Finishing
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• v.21 no.3
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• pp.19-25
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• 2009

Polymerization of tetraethoxysilane on a glass substrate was investigated by remote microwave plasma using argon with portions of nitrous oxide as carrier gas. Transparent layer like a thickness of 0.5 ${\mu}m$ 3 ${\mu}m$ were obtained, differing in chemical composition, depending on plasma power and treatment time as well as on ageing time. In general the milder the treatment and the shorter the ageing was, the higher was the content of organic structural elements in the layer. We have identified that the chemical structure of our samples composed of mainly Si O and Si C groups containing aliphatics, carbonyl groups. These results were obtained by X ray photon spectroscopy, Fourier transformed infrared spectroscopy, and scanning electron microscope combined with Energy dispersive X ray spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.340-346
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• 1998

In this study, we intended to investigate aging effect of polyimide prepared by VDPD(vapor deposition polymerized method). The prepared polymide was treated by the oxygen and argon gas plasma. And we evaluated the polyimide treated by plasma from contact angle, surface leakage current, FT-IR and SEM. We know that the structure of polyimide at surface are changed to amide structure by plasma treating. It seems that strong energy of plasma causes breaking the molecular chin of the polyimide. And surface roughness increases with plasma treating time increased and sequentially the wettability and leakage current increases.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.438-443
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• 1996

The effect of plasma polymerization conditions on the structure of the plasma polymerized styrene were investigated by using Fourier Transform Infrared Ray(FT-IR), Differential Scanning Calorimetry (DSC), Gel Permeation Chromatography(GPC). Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow-type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of plasma polymerized styrene is 1.41~3.93, and deposition rate of that are 32~383[.angs./min] with discharge power. Swelling and etching resistance becomes more improved with increasing discharge power during plasma polymerization. (author). 11 refs., 10 figs., 1 tab.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.425-429
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• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.697-702
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• 2011

In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. In the electrical characteristic results with deposition pressures and substrate RF bias power in thin film deposition process, we have got dielectric constant of 3.4, high deposition rate of 8.6 [nm/min] and high insulation characteristics in condition of RF100 [W], Ar20 [sccm], 5 [mtorr], RF bias 20 [W]. Therefore, the fabricated thin films are possible as insulation layer of OTFT and organic memory.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1444-1446
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• 2009

The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.213-219
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• 1997

The plasma polymerized styrene films were prepared by using an inter-electrode capacitively coupled gas-flow-type reactor, and the effects of plasma polymerization condition on the molecular weight distribution were investigated by Fourier Transform Infrared (FT-IR), Pyrolysis Gas Chromatography(PyGC), Differential Scanning Calorimetry(DSC) and Gel Permeation Chromatography(GPC). From the above results, the very cross-linked films different from chemical characteristics of the starting monomer were taken out, and it is realized that the molecular structure, cross linking density, and molecular weight distribution could be controlled by changing the parameters such as deposition pressure, deposition power and gas flow rate. Accordingly, it is suggested that plasma polymerization method performed by inter-electrode capacitively coupled gas-flow-type reactor has good characteristics for manufacturing the functional organic thin films which can be applied in sensors, opto-electric device, photo-resist by changing the polymerization parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).