• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.537-539
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• 2007

Telemetry processing system requires minimum bit transition level in data streams to maintain a bit synchronization while receiving telemetry signal. PN code has a capability of providing the bit transition and is widely used in the packet communication of CCSDS. CCSDS PN code that generator polynomial is $h(x)=x^{8}+x^{7}+x^{5}+x^{3}+1$, and the random bit sequence that is generated from this polynomial is repeated with the cycle of 255 bits. As the resolution of satellite image increases, the size and transmission rate of data increases. To process of huge and bulky size of satellite image, the speed of CCSDS PN Processing is very important. This paper introduces the way of improving the CCSDS PN Processing speed through processing 128 bits at one time using the feature of cyclic structure that repeats after first 255 bytes by grouping the random bit sequence with 1 byte and Intel Streaming SIMD Extensions 2. And this paper includes the comparison data of processing speed between SSE2-applied implementation and not-applied implementation, in addition, the measured value of speed improvement.

• Membrane Journal
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• v.2 no.2
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• pp.129-134
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• 1992

The solubility of methane in poly(n-butyl methacrylate)(PnBMA) was determined at pressures up to 35 atm. These measurements were made by volumetric technique in the temperature range from -10 to 30$^{\circ}$C. The solubility was found to be a nonlinear function of the applied pressure and could be satisfactorily described by dual-mode sorption model at temperatures below the glass txansition temperature($T_g$) of the polymer. The Langmuir capacity constant decreased with increasing temperature and vanished near the glass transition temperature of PnBMA. The solubility isotherm became linear at temperatures above the glass transition temperature of PnBMA. The temperature dependence of the dual-mode sorption parameters was also discussed.

• Journal of Korean Neurosurgical Society
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• v.64 no.3
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• pp.367-373
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• 2021

Secondary neurulation (SN) is a critical process to form the neural tube in the posterior region of the body including the tail. SN is distinct from the anteriorly occurring primary neurulation (PN); whereas the PN proceeds by folding an epithelial neural plate, SN precursors arise from a specified epiblast by epithelial-to-mesenchymal transition (EMT), and undergo self-renewal in the tail bud. They finally differentiate into the neural tube through mesenchymal-to-epithelial transition (MET). We here overview recent progresses in the studies of SN with a particular focus on the regulation of cell lineage, self-renewal, and EMT/MET. Cellular mechanisms underlying SN help to understand the functional diversity of the tail in vertebrates.

• Journal of Life Science
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• v.29 no.5
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• pp.530-536
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• 2019

Glioblastoma (GBM) is the most incurable brain cancer derived from the transformed glial cells. Standard anti-GBM treatment, including surgery and chemoradiotherapy, does not ensure good prognosis for the patients with GBM, because successful therapy is often impeded by presence of glioma stem cells (GSCs). GSCs, which is generally divided into proneural (PN) and mesenchymal (MES) subtype, are understood as subpopulation of cancer cells responsible for GBM initiation, progression and recurrence after standard treatments. In the present study, we demonstrate that PN subtype GSCs differentially transit to MES subtype GSCs by specific cytokines. The expression of CD44, a marker of MES subtype GSCs, was observed when GSC11 PN subtype GSCs were exposed to tumor necrosis factor alpha ($TNF-{\alpha}$) cytokine and GSC23 PN subtype GSCs were treated to transforming growth factor beta 1 ($TGF-{\beta}1$) cytokine. Ivy glioblastoma atlas project (Ivy GAP) bioinformatics database showed that $TNF-{\alpha}$ and $TGF-{\beta}1$ were highly expressed in necrotic region and perivascular region, respectively. In addition, $TNF-{\alpha}$ signaling was relatively upregulated in necrotic region, while $TGF-{\beta}$ signaling was increased in perivascular region. Taken together, our observations suggest that MES subtype GSCs can be derived from various PN subtype GSCs by multimodal cytokine stimuli provided by neighboring tumor microenvironment.

• Macromolecular Research
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• v.15 no.7
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• pp.656-661
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• 2007

The effects of a neutral solvent of dioctyl phthalate (DOP) on the phase behavior of symmetric polystyrene-block-poly(n-butyl methacrylate) copolymers (PS-b-PnBMA) were assessed herein. Closed-loop phase behavior with a lower disorder-to-order transition (LDOT) and an upper order-to-disorder transition (UODT) was observed for PS-b-PnBMA/DOP solution when the quantity of DOP was carefully controlled. When the molecular weight of PS-b-PnBMA became larger, the LDOT did not appreciably change at smaller quantities of DOP. With larger quantities of DOP, the reduction in the UODT is greater than the increase in the LDOT. This behavior is discussed in accordance with a molecular theory predicated on a compressible random-phase approximation.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.75-76
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• 2006

New PM route via bulk mechanical alloying is developed to fabricate the solid solution semi-conductive materials with $Mg_2Si_{1-x}Ge_x$ and $Mg_2Si_{1-y}Sn_y$ for 0 < x, y < 1 and to investigate their thermoelectric materials. Since $Mg_2Si$ is n-type and both $Mg_2Ge$ and $Mg_2Sn$ are p-type, pn-transition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n-and p-type materials.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Bulletin of the Korean Chemical Society
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• v.14 no.1
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• pp.118-122
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• 1993

The 77 K luminescence and excitation spectra, room-temperature FT-infrared and visible absorption spectra of a newly prepared complex cis-[Cr(cyclam)(pn)]$(ClO_4)_3$, where cyclam and pn represent 1,4,8,11-tetraazacyclotetradecane and 1,2-propanediamine respectively, have been measured. Absorption maximum of the first spin-allowed transition in the electronic absorption spectra of cis-[Cr(cyclam)(pn)]$^{3+}$ and cis-[Cr(cyclam)(en)]$^{3+}$ appears at nearly the same position. The two spin-allowed and six spin-forbidden electronic transitions are assigned from the visible absorption and excitation spectra. It is also shown that the zero phonon line in the excitation spectrum splits into two components by 50 cm$^{-1}$.

• Vacuum Magazine
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• v.5 no.2
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• pp.18-22
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• 2018

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.705-716
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• 2010

Effects of specimen thickness and notch shape on fracture mode appearing in drop weight tear test (DWTT) specimens of API X70 and X80 linepipe steels were investigated. Detailed microstructural analysis of fractured DWTT specimens showed that the fractures were initiated in normal cleavage mode near the specimen notch, and that some separations were observed at the center of the fracture surfaces. The Chevron-notch (CN) DWTT specimens had broader normal cleavage surfaces than the pressed-notch (PN) DWTT specimens. Larger inverse fracture surfaces appeared in the PN DWTT specimens because of the higher fracture initiation energy at the notch and the higher strain hardening in the hammer-impacted region. The number and length of separations were larger in the CN DWTT specimens than in the PN DWTT specimens, and increased with increasing specimen thickness due to the plane strain condition effect. As the test temperature decreased, the tendency to separations increased, but separations were not found when the cleavage fracture prevailed at very low temperatures. The DWTT test results, such as upper shelf energy and energy transition temperature, were discussed in relation with microstructures and fracture modes including cleavage fracture, shear fracture, inverse fracture, and separations.