• Title/Summary/Keyword: r.f. sputtering

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Fabrication and Characterization of ${LiMn_2}{O_4}$ Cathode for Lithium Rechargeable Battery by R.F.Magnetron Sputtering (R.F. Magnetron Sputtering을 이용한 리튬이차전지 정극용 ${LiMn_2}{O_4}$의 제조 및 특성)

  • 우태욱;손영국
    • Journal of the Korean Ceramic Society
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    • v.37 no.6
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    • pp.552-558
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    • 2000

  • LiMn2O4 thin fiolm cathodes for Li-ion secondary battery were fabricated by r.f. magnetron sputtering technique. As-deposited films were amorphous. A spinel structure could not be obtained LiMn2O4 films by in-situ thermal annealing. After post thermal annealing over $700^{\circ}C$ in oxygen atmosphere, LiMn2O4 films prepared above 100 W r.f. power could be crystallized into a spinel structure. The electrochemical property of the LiMn2O4 film cathodes was tested in a Li/1 M LiClO4 in PC/LiMn2O4 cell. From cyclic voltammetry at scan rate of 2mV/sec of 2.5~4.5V, LiMn2O4 electrode prepared by post annealing at 75$0^{\circ}C$ showed good initial capacity. LiMn2O4 electrode prepared by post annealing at 80$0^{\circ}C$ showed the best crycling performance.

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Characteristics of TiO2 Thin Films Fabricated by R.E, Magnetron Sputtering (R.F Magnetron Sputtering법으로 제조한 TiO2 박막의 특성)

  • Chu Y. H.;Choi D. K.
    • Korean Journal of Materials Research
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    • v.14 no.11
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    • pp.821-827
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    • 2004

  • Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

  • https://doi.org/10.3740/MRSK.2004.14.11.821 인용 PDF KSCI

Structure and Properties of Sputtered Indium Tin Oxide Thin Film (R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기$\cdot$광학적 특성)

  • Jung Y.H.;Lee E.S.;Munir B.;Wibowo R.A.;Kim K.H.
    • Journal of the Korean institute of surface engineering
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    • v.38 no.4
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    • pp.150-155
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    • 2005

  • Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

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