• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.47-50
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• 1986

Photodesorption of adsorbed $O_2^-$ on ZnO was investigated in ZnO-$O_2(N_2)$-rubrene-bromobenzene mixture. When the mixture was illuminated with the light having the energy greater than the band gap energy of ZnO (3.2eV), the amount of reacted rubrene increased as the amount of ZnO increased in the experimental condition. For the energy of light less than 3.2eV, however, the reacted amount of rubrene decreased as the amount of ZnO increased. There is a difference in the reacted amount of rubrene between ZnO-$O_2$-rubrene-bromobenzene and ZnO-$N_2$-rubrene-bromobenzene mixtures. From the results, it was suggested that the adsorbed $O_2^-$ on ZnO transform to singlet oxygen in the photodesorption process and the singlet oxygen reacted with rubrene.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.1-6
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• 2006

The white organic light emitting diode(OLED) with two-wavelength was fabricated using the DPVBi of blue emitting material and a series of orange colar fluorescent dye(Rubrene) by vaccum evaporation processes. The basic structure of OLED was ITO/TPD$(225{\AA})$/DPVBi/Rubrene/BCP$(210{\AA})/Alq_3(225{\AA})/Al(1000{\AA})$. We analyzed the fabricated device through the changes of the DPVBi and Rubrene layer's thickness. We obtained the white OLED with the CIE coordinate of the device was (0.29, 0.33) and luminescence of $1000cd/m^2$ at applied voltage of 15V when 4he thickness of DPVBi layer was 210${\AA}$ and the thickness of Rubrene layer was 180${\AA}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.948-951
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• 2003

The electroluminescence (EL) properties were studied in organic light-emitting diodes with a red fluorescent dye, 4- (dicyanomethylene)- 2- tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)- 4H- pyran (DCJTB) doped into tris-(8-hydroxyquinoline)aluminum ($Alq_{3}$), rubrene and the mixed matrix of $Alq_3$ and rubrene. The device with DCJTB doped into the $Alq_{3}$:rubrene mixed host shows an efficient red emission from DCJTB with a negligible EL emission from $Alq_{3}$ and a lower EL onset voltage compared to the device with DCJTB doped into the $Alq_{3}$ only host. The quantum efficiency is almost temperature-independent for the device with the $Alq_3:rubrene$ mixed host. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the $Alq_{3}$:rubrene mixed host.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.474-474
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• 2012

유기발광소자는 다른 디스플레이에 비해 높은 명암비와 색재현성의 장점을 갖는 차세대 디스플레이로서, 얇은 박막 특성을 가지고 있기때문에 모바일용 디스플레이 기술로 많이 사용되고 있다. 하지만 낮은 발광효율, 높은 구동전압 및 전압에 따른 색좌표 변화의 문제점을 가지고 있어 이를 극복하기 위한 많은 연구가 진행되고 있다. 유기 발광 소자의 발광효율을 높이며 구동 전압을 낮추기 위해 호스트물질에 다양한 도펀트를 도핑하고 있다. 높은 발광효율을 가지는 도펀트인 5,6,11,12-tetraphenylnaphthacene (rubrene)을 사용한 유기발광소자는 rubrene의 안정된 분자 에너지 레벨로 인해 전자들이 포획되는 현상이 나타나 효율이 감소되는 원인이 규명되지 않았다. 본 연구에서는 rubrene을 발광층으로 사용하여, 전공수송층인 N,N_-bis-(1-naphthyl)-N,N_-diphenyl-1,1-biphenyl-4,4-diamine (NPB)의 두께에 따른 I-V 변화와 전계발광 스펙트럼를 분석하여 두께에 따른 rubrene의 전자 포획를 관찰하였다. rubrene보다 큰 lowest unoccupied molecular orbital 에너지를 갖는 NPB와 에너지장벽으로 낮은 highest occupied molecular orbital 에너지를 갖는 4,7-diphenyl-1,10-phenanthroline을 각각 교차되게 적층한 유기발광소자의 I-V 변화와 전자 전공 재결합층의 위치변화에 따른 전계발광 스펙트럼을 비교 분석하였다. 이 결과는 발광층 내부의 rubrene의 상대적인 위치와 에너지장벽과의 상관관계에 따른 전자 포획 메커니즘을 이해하는데 도움 줄 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.939-942
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• 2001

We fabricated Red Organic light-emitting devices(OLED). The Basic Device Structure is ITO/hole transfer layer, TPD(50nm)/red emitting layer, Alq3 doped with DCM2 or DCM2:rubrene(xnm)/electorn transfer layer, Alq3(50-xnm)/LiF(0.8nm)/Al(8nm) . The thickness of emitting layer(xnm) changed 5, 10, 20nm. we demonstrate red emitting OLED with dependent on the thickness and concentrators of Alq3 layer doped with DCM2 or co-doped with DCM2:ruberene. The Emission color and Brightness are changed with doping or co-doping condition, dopant concentarton. In the case of rubrene:DCM2 co-doped layer structure, the red color Purity and device efficiency is improved. The CIE index of rubrene co-doped OLED is x=0.67, y=0.31. By co-doping the Alq3 layer with DCM2, rubrene, EL efficiency improved from 0.38cd/A to 0.44cd/A in comparison whit DCM2 doped Alq3 layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.217-222
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• 2004

The white-light-emitting organic LED(OLED) with two-wavelength was fabricated using the DPVBi of blue emitting material and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi/Rubrene/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). We analyzed the fabricated device through the changes of the DPVBi and Rubrene layer's thickness. We obtained the white-light-emitting OLED with white color light and the CIE coordinate of the device was (0.29, 0.33) at applied voltage of 13V when the thickness of DPVBi layer was 210$\AA$ and the thickness of Rubrene layer was 180$\AA$. At a current of 100㎃/$\textrm{cm}^2$, the quantum efficiency was 0.35％ and at a voltage of 20V, it was 0.405％.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.616-621
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• 2003

The white-light-emitting organic LED with two-wavelength was fabricated using blue emitting material(DPVBi) and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi(150$\AA$)/Alq$_3$:Rubrene(150$\AA$)/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). The changes of the CIE coordiante strongly depended on the doping concentration of Rubrene and the thickness of NPB layer. We obtained the white-light-emitting OLED close to the pure white color light and the CIE coordinate of the device was (0.315, 0.330) at applied voltage of 13V when the doping concentration of Rubrene was 0.5wt% and the thickness of NPB layer is 200$\AA$. At a current of 100mA/$\textrm{cm}^2$, the quantum efficiency was 0.35%.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.71-75
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• 2006

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.

• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.144-152
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• 2021

Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.