• Transactions of the Korean hydrogen and new energy society
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• v.18 no.1
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• pp.32-39
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• 2007

CO oxidation and selective CO oxidation of $La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ perovskite(x=1, 0.9, 0.7. 0.5; y=1, 0.9, 0.7, 0.5) were investigated. For CO oxidation, catalytic activities were studied according to different preparation conditions such as pH and calcination temperature. The influence of the change of the $O_2$ concentration for selective CO oxidation was studied, too. The substitution of Ce for La improved the catalytic activity for CO oxidation and selective CO oxidation and best activity was observed for $La_{0.7}Ce_{0.3}CoO_3$ prepared at pH 11 and calcined at $600^{\circ}C$. The temperature of 90% CO conversion for CO oxidation using $La_{0.7}Ce_{0.3}CoO_3$ was $230^{\circ}C$. In contrast to the enhancement effect by Ce substitution, the partial substitution of Cu for Co in $LaCo_yCu_{1-y}O_{3-{\alpha}}$ decreased catalytic activities for CO oxidation reaction compared to that using $LaCoO_3$. For selective CO oxidation, the best CO conversion was 66% at $230^{\circ}C$ for $La_{0.7}Ce_{0.3}CoO_3$. The CO conversion of $La_{0.7}Ce_{0.3}CoO_3$ was greatly increased from 66% to 91% as increasing $O_2$ concentration from 1% to 2%.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.10a
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• pp.269-274
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• 2001

This paper describes the experimental results on direct selective laser sintering of WC-Co mixture. The experiments were carried out within an air, argon and nitrogen atmosphere. The main problem occurred during sintering within an air atmosphere was oxidation of WC-Co mixture. As the power of laser is increased and scanning speed is decreased, more severe oxidation takes place. Within an argon and nitrogen atmosphere the oxidation is reduced significantly. As the energy density is increased the thickness of the sintered layer is increased.

• Journal of the Korean Chemical Society
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• v.56 no.5
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• pp.539-541
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• 2012

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.120-122
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• 2001

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.

• Journal of Microbiology and Biotechnology
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• v.23 no.5
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• pp.719-723
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• 2013

Nitrification in wastewater treatment emits a significant amount of nitrous oxide ($N_2O$), which is one of the major greenhouse gases. However, the actual mechanism or metabolic pathway is still largely unknown. Selective nitrification inhibitors were used to determine the nitrification steps responsible for $N_2O$ emission with activated sludge and enriched nitrifiers. Allylthiourea (86 ${\mu}M$) completely inhibited ammonia oxidation and $N_2O$ emission both in activated sludge and enriched nitrifiers. Sodium azide (24 ${\mu}M$) selectively inhibited nitrite oxidation and it led to more $N_2O$ emission than the control experiment both in activated sludge and enriched nitrifiers. The inhibition tests showed that $N_2O$ emission was mainly related to the activity of ammonia oxidizers in aerobic condition, and the inhibition of ammonia monooxygenase completely blocked $N_2O$ emission. On the other hand, $N_2O$ emission increased significantly as the nitrogen flux from nitrite to nitrate was blocked by the selective inhibition of nitrite oxidation.

• Corrosion Science and Technology
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• v.10 no.1
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• pp.6-12
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• 2011

The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at $800^{\circ}C$ was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure $N_{2}$ atmosphere with a dew point $-40^{\circ}C$ promoted the selective oxidation of Mn as a crystalline $Mn_{2}SiO_{4}$ phase, whereas the $N_{2}$ + 10% $H_{2}$ atmosphere with the same dew point $-40^{\circ}C$ promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the $Mn_{2}SiO_{4}$ phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure $N_{2}$ atmosphere resulted in a higher formation rate of $Fe_{2}Al_{5}$ particles at the Zn/steel interface and better galvanizability than the $N_{2}$ + 10% $H_{2}$ atmosphere.

• Journal of Convergence for Information Technology
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• v.11 no.7
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• pp.104-110
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• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.158-162
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• 2000

The high temperature oxidation behavior and the surface defect in Fe-25Mn-1.5A1-0.5C steel was investigated by XRD (X-ray Diffractin) and electron microscopy. The intra- and inter-granular oxides were formed by the selective oxidation of manganese and aluminum, which were identified to MnAl2O4 phase. Aluminum nitride (AlN) was formed in front of these oxides. The ${\gamma}$-matrix was transformed to ${\alpha}$- and ${\varepsilon}$- phases by the selective oxidation of manganese. The surface defect, micro-scab was induced by the difference of the high temperature ductility between the matrix and the inter-granular oxide.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2002.02a
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• pp.187-194
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• 2002

This paper describes the experimental results on direct selective laser sintering of WC-Co mixture for rapid tooling. The experiments were carried out within an air, argon and nitrogen atmosphere. Coupons of single layer were sintered at various laser powers, scanning speeds and scan spacings. As the energy density (energy per unit scanned area) is increased, the thickness of coupons is increased. The main problem took place during sintering within an air atmosphere was severe oxidation of WC-Co mixture. As the laser power is increased and/or scanning speed is decreased, more severe oxidation occurred. Within an argon and nitrogen atmosphere the oxidation is reduced significantly. Experiments on multi-layer sintering were also carried out.