• 한국수소및신에너지학회논문집
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• 제18권1호
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• pp.32-39
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• 2007

CO oxidation and selective CO oxidation of $La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ perovskite(x=1, 0.9, 0.7. 0.5; y=1, 0.9, 0.7, 0.5) were investigated. For CO oxidation, catalytic activities were studied according to different preparation conditions such as pH and calcination temperature. The influence of the change of the $O_2$ concentration for selective CO oxidation was studied, too. The substitution of Ce for La improved the catalytic activity for CO oxidation and selective CO oxidation and best activity was observed for $La_{0.7}Ce_{0.3}CoO_3$ prepared at pH 11 and calcined at $600^{\circ}C$. The temperature of 90% CO conversion for CO oxidation using $La_{0.7}Ce_{0.3}CoO_3$ was $230^{\circ}C$. In contrast to the enhancement effect by Ce substitution, the partial substitution of Cu for Co in $LaCo_yCu_{1-y}O_{3-{\alpha}}$ decreased catalytic activities for CO oxidation reaction compared to that using $LaCoO_3$. For selective CO oxidation, the best CO conversion was 66% at $230^{\circ}C$ for $La_{0.7}Ce_{0.3}CoO_3$. The CO conversion of $La_{0.7}Ce_{0.3}CoO_3$ was greatly increased from 66% to 91% as increasing $O_2$ concentration from 1% to 2%.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2001년도 추계학술대회 논문집
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• pp.269-274
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• 2001

This paper describes the experimental results on direct selective laser sintering of WC-Co mixture. The experiments were carried out within an air, argon and nitrogen atmosphere. The main problem occurred during sintering within an air atmosphere was oxidation of WC-Co mixture. As the power of laser is increased and scanning speed is decreased, more severe oxidation takes place. Within an argon and nitrogen atmosphere the oxidation is reduced significantly. As the energy density is increased the thickness of the sintered layer is increased.

• 대한화학회지
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• 제56권5호
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• pp.539-541
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• 2012

• Bulletin of the Korean Chemical Society
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• 제22권1호
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• pp.120-122
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• 2001

• 전자공학회논문지A
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• 제33A권6호
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.

• Journal of Microbiology and Biotechnology
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• 제23권5호
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• pp.719-723
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• 2013

Nitrification in wastewater treatment emits a significant amount of nitrous oxide ($N_2O$), which is one of the major greenhouse gases. However, the actual mechanism or metabolic pathway is still largely unknown. Selective nitrification inhibitors were used to determine the nitrification steps responsible for $N_2O$ emission with activated sludge and enriched nitrifiers. Allylthiourea (86 ${\mu}M$) completely inhibited ammonia oxidation and $N_2O$ emission both in activated sludge and enriched nitrifiers. Sodium azide (24 ${\mu}M$) selectively inhibited nitrite oxidation and it led to more $N_2O$ emission than the control experiment both in activated sludge and enriched nitrifiers. The inhibition tests showed that $N_2O$ emission was mainly related to the activity of ammonia oxidizers in aerobic condition, and the inhibition of ammonia monooxygenase completely blocked $N_2O$ emission. On the other hand, $N_2O$ emission increased significantly as the nitrogen flux from nitrite to nitrate was blocked by the selective inhibition of nitrite oxidation.

• Corrosion Science and Technology
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• 제10권1호
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• pp.6-12
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• 2011

The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at $800^{\circ}C$ was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure $N_{2}$ atmosphere with a dew point $-40^{\circ}C$ promoted the selective oxidation of Mn as a crystalline $Mn_{2}SiO_{4}$ phase, whereas the $N_{2}$ + 10% $H_{2}$ atmosphere with the same dew point $-40^{\circ}C$ promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the $Mn_{2}SiO_{4}$ phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure $N_{2}$ atmosphere resulted in a higher formation rate of $Fe_{2}Al_{5}$ particles at the Zn/steel interface and better galvanizability than the $N_{2}$ + 10% $H_{2}$ atmosphere.

• 융합정보논문지
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• 제11권7호
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• pp.104-110
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• 2021

본 핀 채널 전계 효과 트랜지스터에서 낮은 소스/드레인 직렬 저항을 위한 새로운 선택적 산화 방식을 제안하였다. 이 방법을 이용하면, gate-all-around 구조와 점진적으로 증가되는 형태의 소스/드레인 확장영역을 갖는 핀 채널 MOSFET를 얻을 수 있다. 제안된 트랜지스터는 비교 소자에 비해 70% 이상의 소스/드레인 직렬 저항의 감소를 얻을 수 있다. 또한, 제안된 소자는 단채널 효과를 억제하면서도 높은 구동 전류와 전달컨덕턴스 특징을 보인다. 제작된 소자의 포화전류, 최대 선형 전달컨덕턴스, 최대 포화 전달컨덕턴스, subthreshold swing, 및 DIBL은 각각 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, 62 mV/V의 값을 갖는다.

• 열처리공학회지
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• 제13권3호
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• pp.158-162
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• 2000

The high temperature oxidation behavior and the surface defect in Fe-25Mn-1.5A1-0.5C steel was investigated by XRD (X-ray Diffractin) and electron microscopy. The intra- and inter-granular oxides were formed by the selective oxidation of manganese and aluminum, which were identified to MnAl2O4 phase. Aluminum nitride (AlN) was formed in front of these oxides. The ${\gamma}$-matrix was transformed to ${\alpha}$- and ${\varepsilon}$- phases by the selective oxidation of manganese. The surface defect, micro-scab was induced by the difference of the high temperature ductility between the matrix and the inter-granular oxide.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2002년도 금형가공 심포지엄
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• pp.187-194
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• 2002

This paper describes the experimental results on direct selective laser sintering of WC-Co mixture for rapid tooling. The experiments were carried out within an air, argon and nitrogen atmosphere. Coupons of single layer were sintered at various laser powers, scanning speeds and scan spacings. As the energy density (energy per unit scanned area) is increased, the thickness of coupons is increased. The main problem took place during sintering within an air atmosphere was severe oxidation of WC-Co mixture. As the laser power is increased and/or scanning speed is decreased, more severe oxidation occurred. Within an argon and nitrogen atmosphere the oxidation is reduced significantly. Experiments on multi-layer sintering were also carried out.