• Journal of Radiation Protection and Research
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• 제35권2호
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• 한국군사과학기술학회지
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• 제14권2호
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• pp.299-304
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• 2011

In this paper, we developed the semiconductor neutron radiation detector and the multi-purpose radiation detection technologies for the next generation military personal surveymeter. The PIN type semiconductor neutron detector and the prototype measure the neutron radiation dose upto 1,000cGy with ${\pm}20%$ error. It also have a good performance about the Gamma, Alpha and Beta radiation and MIL-STD-810F.

• Journal of Radiation Protection and Research
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• 제34권2호
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• 대한방사선방어학회:학술대회논문집
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• 대한방사선방어학회 2011년도 춘계 학술발표회 및 심포지엄
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• pp.94-95
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• 2011

• 제어로봇시스템학회논문지
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• 제9권4호
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• pp.296-303
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• 2003

A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

• Nuclear Engineering and Technology
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• 제38권4호
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• pp.311-318
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• 2006

Ionizing radiation is a both a natural and man-made phenomena that plays a major role in contemporary applications. The detection of this radiation has evolved over the past several decades from simple observations to precise measurements in space, time, and energy, even in harsh environmental conditions. Tn this paper, we present a snapshot of the current state-of-the-art in radiation measurement technology, highlighting the major applications and detector developments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.87-90
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• 2006

Two SiC radiation detector samples were irradiated by Co-60 gamma rays. The irradiation was performed with dose rates of 5 kGy/hour and 15 kGy/hour for 8 hours, respectively. Metal/semiconductor contacts on the surface were fabricated by using a thermal evaporator in a high vacuum condition. The SiC detectors have metal contacts of Au(2000 ${\AA}$)/Ni(300 ${\AA}$) at Si-face and of Au(2000 ${\AA}$)/Ti(300 ${\AA}$) at C-face. I-V characteristics of the SiC semiconductor were measured by using the Keithley 4200-SCS parameter analyzer with voltage sources included. From the I-V curve, we analyzed the Schottky barrier heights(SBHs) on the basis of the thermionic emission theory. As a result, the 6H-SiC semiconductor showed- similar Schottky barrier heights independent to the dose rates of the irradiation with Co-60 gamma rays.

• Journal of Radiation Protection and Research
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• 제27권1호
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• pp.51-57
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• 2002

반도체 검출기를 이용하여 Hybrid 전치증폭기를 갖는 전자식 개인선량계를 설계 제작하고, 방사선 검출 반응특성과 기계적 및 주변 환경 요건에 따른 각종 성능을 평가하였다. $^{137}Cs$ 감마 방사선을 이용한 방사선 조사 시험결과 감도는 $3.8\;cps/Gy{\cdot}h^{-1}$이고, $10{\mu}Sv{\sim}4Sv$ 범위의 선량당량 조사시 선량계의 지시값은 오차 8%이하에서 선형성이 잘 유지되었다. 방향의존성을 ${\pm}60^{\circ}$ 이내에서 4%이하이며, ISO 기준선장에 의한 에너지 반응영역은 $60{\sim}1,250\;keV$로 나타났으며, IEC 61526에 의한 선량계의 성능검사시 9개 영역의 시험항목에 대한 국제기준을 만족하였다.

• Journal of Radiation Protection and Research
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• 제9권1호
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• pp.19-25
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• 1984

There is not yet an universal method of electron dosimetry. The Authors measured dose distributions of the electron beams from Clinac-18 by means of silicon detector connected to X-Y recorder, and compared them in water phantom with dose distributions measured by film and ion chamber, both inserted in polystyrene phantom. The results are as followings, 1. Dose in build-up region increased with the field size for all energy, and depth dose profiles of $6{\sim}12MeV$ beam under the depth of maximum dose were independent of field size, but those of 15 and 18 MeV beam were dependent on the field size. 2. The widths of penumbra by semiconductor detector were narrower than those by film for same energy beam. 3. Depth dose profiles by three different dosimeter did not coincide each other. In the build-up region, dose by semiconductor detector was lower than that by any other dosimeter.

• 한국방사선학회논문지
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• 제11권3호
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• pp.171-175
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• 2017

비파괴검사 분야에서는 작업자들의 안전을 확보하기 위해 방사선원에 대한 시스템 개발에 많은 시간과 재원을 투자하고 있으나 아직까지 사고 발생 확률은 높은 실정이다. 방사선에 대한 잠재적 사고를 미연에 방지하기 위해서는 방사선원의 위치를 직접적으로 검증하는 것이지만 아직까지 연구가 미흡한 실정이다. 이에 본 연구에서는 감마선조사기의 선원 가이드 튜브에서 방사선원의 위치를 감지할 수 있는 모니터링 시스템 개발을 위한 선행연구로써 몬테카를로 시뮬레이션을 통해 방사선 검출기에 대한 특성을 모의 추정하였다. 연구 결과, Ir-192의 감마선 에너지에 대한 방사선 검출기는 반도체 소재에 무관하게 $150{\mu}m$에서 2차 전자평형이 이루어지는 것으로 분석되었으며, 감마선 응답 특성은 $HgI_2$가 가장 우수할 것으로 기대된다. 이러한 결과는 차후 모니터링 시스템의 검출부에 위치하는 방사선 검출기의 최적화 두께를 결정하는데 기초자료로써 활용될 수 있을 것으로 기대되며, 이를 바탕으로 모니터링 시스템을 개발 시 방사선작업종사자가 위험을 쉽게 인지하여 안전을 확보할 수 있을 뿐만 아니라 잠재적인 방사선 사고에 대한 예방 및 선제적 대응이 가능함으로써 사회 안전망 구축 에 기여할 수 있을 것이다.