• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2285-2288
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• 2002

Recently, electronic personal dosimeters based upon silicon PIN photodiode or miniature GM tube were developed and have attracted a lot of attention because of the advantages of their nature such as indication of dose rate and the cumulative dose, and facilitation of record keeping. In this paper, we have developed a high-sensitivity electronic personal dosimeter with silicon PIN photodiode. The electronic personal dosimeter is constructed with silicon PIN photodiode, preamplifier, and shaping amplifier. To show the effectiveness of electronic personal dosimeter, we conducted nuclear radiation experiments using $\gamma$-ray Ba-133, Cs-137, and Co-60. The electronic personal dosimeter have a good linearity on $\gamma$-ray energy and activity.

• Journal of Institute of Control, Robotics and Systems
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• v.9 no.4
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• pp.296-303
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• 2003

A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.754-756
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• 1999

In this paper, we have developed a high-sensitivity SNRD(Semiconductor Nuclear Radiation Detector) using silicon PIN photodiode. The SNRD is constructed with silicon PIN photodiode(S3590-05), preamplifier and shaping amplifier. To show the effectiveness of SNRD, nuclear radiation experiments are conducted with $\gamma$-ray Ba-133, Cs-137 and Co-60. The SNRD is different in characteristics of the energy spectrum to scintillation detectors. However, the SNRD have a good linearity on $\gamma$-ray energy and activity. The results of this paper can be applied to electronic personal dosimeter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1407-1412
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser at 850 nm ~ 1000 nm of near-infrared wavelength band, this study has produced silicon-based fast film PIN photodiode and analyzed electrical and optical properties. The manufactured device is packaged in TO-18 type. The electrical properties of the dark currents both Anode 1 and Anode 2 have valued of approximately 0.055 nA for 5 V reverse bias, while the capacitance showed 19.5 pF at frequency range of 1 kHz and about 19.8 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was verified to have fast response time of about 30 ns for 10 V. For the optical properties, the best spectrum sensitivity was 0.66 A/W for 880 nm, while it was relatively excellent value of 0.45 A/W for 1,000 nm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1068-1073
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• 1988

PIN-Photodiodes were fabricated with CO2 laser annealed SOI and their electric characteristics were measured. Dark current decreased and photocurrent-dark current ratio increased as the grain size of polycrystalline silicon in intrinsic region increased. In case of the largest grain, 10-20um, dark current was 30 n A (at - 4V) and photocurrent was proportional to light intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.377-377
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• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• Journal of the Korean Society of Radiology
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• v.16 no.5
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• pp.519-526
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• 2022

Electronic personal dosimeter (EPD) provide real time monitoring and a direct indication of the accumulated dose or dose rate in terms of personal dose. Most EPD do not perform well in low energy photon radiation fields present in medical radiation environments. It has poor responsibility and large error rate for low energy photon radiation of medical radiation environments. This study evaluated to optimal additional filtration for EPD using silicon PIN photodiode detector form 40 to 120 kVp range in medical radiation environments. From 40 to 80 kVp energy range, Al 0.2 mm and Sn 1.0 mm overlapped filtration showed good responsibility to dose rate and from 80 kVp to 120 kVp energy range, Al 0.2 mm and Sn 1.6 mm overlapped filtration showed good responsibility to dose rate.