• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.15-19
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• 2003

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/$\textrm{cm}^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/$\textrm{cm}^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.27-30
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• 2003

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $35A/cm^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and $100A/cm^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.392-395
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• 2003

For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $354/{\S}^2$, respectively. But the proposed EST exhibits snap-back with the anode voltage and current density 0.93V and $58A/{\S}^2$, respectively. Saturation current density of the proposed EST at anode voltage 6.11V is $3797A/{\S}^2$. The characteristics of 700V forward blocking of the proposed EST obtained from two dimensional numerical simulations (MEDICI) is described and compared with that of the conventional EST.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.11
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• pp.1931-1942
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• 1997

A new load/displacement parameter method is developed for the cases that loads are applied to one or more points, and displacements of a structure are controlled at one or more points sinultaneously. The procedure exploits a generalized Riks method, which utilizes load/displacement parameters as scaling factors in order to analyze the post-buckling phenomena including snap-through or snap-back. A convergence characteristic is improved by employing new relaxation factors in incremental displacement parameter, particularly at the region where exhibits severe numerical instability. The improved performance is illustrated by means of numerical example.

• Structural Engineering and Mechanics
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• v.19 no.2
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• pp.153-172
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• 2005

A new load/displacement parameter method is proposed for the simultaneous control of applied loads and structural displacements at one or more points. The procedure is based on a generalized Riks' method, which utilizes load/displacement parameters as scaling factors to analyze post-buckling phenomena including snap-through or snap-back. The convergence characteristics are improved by employing new relaxation factors through an incremental displacement parameter, particularly in a region that exhibits severe numerical instability. The improved performance is illustrated by means of a numerical example.

• Structural Engineering and Mechanics
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• v.45 no.4
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• pp.521-542
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• 2013

In this study a truss model is used for the geometrically nonlinear static and dynamic analysis of a thin shallow arch subject to snap-through. Thanks to the very simple geometry of a truss, the equilibrium conditions can be easily written and the global stiffness matrix can be easily updated with respect to the deformed structure, within each step of the analysis. A very coarse discretization is applied; so, in a very simple way, the high frequency modes are suppressed from the beginning and there is no need to develop a complicated reduced-order technique. Two short computer programs have been developed for the geometrically nonlinear static analysis by displacement control of a plane truss model of a structure as well as for its dynamic analysis by the step-by-step time integration algorithm of trapezoidal rule, combined with a predictor-corrector technique. These two short, fully documented computer programs are applied on the geometrically nonlinear static and dynamic analysis of a specific thin shallow arch subject to snap-through.

• Earthquakes and Structures
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• v.16 no.2
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• pp.209-219
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• 2019

Unbonded Post-Tensioned (UPT) precast concrete systems have been shown to provide excellent seismic resistance. In order to improve understanding of the dynamic response of UPT systems, a series of snap back tests on four UPT systems was undertaken consisting of one Single Rocking Wall (SRW) and three Precast Wall with End Columns (PreWEC) systems. The snap back tests provided both a static pushover and a nonlinear free vibration response of a system. As expected the SRW exhibited an approximate bi-linear inertia force-drift response during the free vibration decay and the PreWEC walls showed an inertia force-drift response with increased strength and energy dissipation due to the addition of steel O-connectors. All walls exhibited negligible residual drifts regardless of the number of O-connectors or the post-tensioning force. When PreWEC systems of the same strength were compared the inclusion of further energy dissipating O-connectors was found to decrease the measured peak wall acceleration. Both the local and global wall parameters measured at pseudo-static and dynamic loading rates showed similar behaviour, which demonstrates that the dynamic behaviour of UPT walls is well represented by pseudo-static tests. The SRW was found to have Equivalent Viscous Damping (EVD) between 0.9-3.8% and the three PreWEC walls were found to have maximum EVD of between 14.7-25.8%.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.71-74
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• 2003

A vertical trench electrode type EST has been proposed in this paper. The proposed device considerably improve the snap-back effect which leads to a lot of problem of device applications. In this paper, the vertical dual gate Emitter Switched Thyristor(EST) with trench electrode has been proposed for improving snap-back effect. It is observed that the forward blocking voltage of the proposed device is 800V. The conventional EST of the same size were no more than 633V. Because the proposed device was constructed of trench-type electrode, the electric field moved toward trench-oxide layer, and the punch through breakdown of the proposed EST is occurred at latest.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.04a
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• pp.357-360
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• 2011

In these days, the passenger vehicles usually have equipped various comfort & security systems to appeal to customers. And then, the importance of emotional quality gives added weight to the noise performance of those system devices. Door inside handle system is one of the most popular devices for passenger. This paper shows developing process about the operating sound of door inside handle. We used DFSS process to develop the door inside handle snap back sound and confirmed the improvement.