• Title/Summary/Keyword: spin polarized tunneling

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Effect of spin-polarized current injection on pair tunneling properties of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ intrinsic Josephson junctions

  • Shin, Ho-Seop;Lee, Hu-Jong;Do Bang;Nguyen Khac Mac
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.5-8
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    • 2003
  • We studied the effect of spin injection on tunneling conduction properties of intrinsic Josephson junctions formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals. properties of an identical stack (10${\times}$5.0${\times}$0.030 $\mu\textrm{m}^3$) of intrinsic Josephson junctions were compared for the bias current injected through Au and Co electrodes. The suppression of the superconducting gap in the $_2$ double layers and the interlayer Josephson critical current was manifested in the tunneling current-voltage characteristics of the stacks. This effect appears to be caused by the pair breaking associated with spin-polarized carriers injected from the Co electrode into the $Bi_2$$Sr_2$$_2$O$CaCu_{ 8+x}$ single crystal. This study may provide valuable information on clarifying the mechanism of high- $T_{c}$ superconductivity.y.y.

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Electromagnetic Resonant Tunneling System: Double-Magnetic Barriers

  • Kim, Nammee
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.128-133
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    • 2014
  • We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

Giant interlayer tunneling magnetoresistance in layered manganite

  • Won, C.J.;Yang, J.J.;Cheong, S.W.;Hur, N.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2015.05a
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    • pp.156-157
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    • 2015
  • we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.

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The correlation between Spin Polarized Tunneling and Magnetic Moment in Co-Mn and Co-Fe Alloy Films (Co1-xFex와 Co1-xMnx 강자성 전이 합금 박막의 자기 모멘트와 터널 접합에 의한 스핀 편극치의 상관관계 연구)

  • Choi, Deung-Jang;Jang, Eun-Young;Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of the Korean Magnetics Society
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    • v.17 no.5
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    • pp.194-197
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    • 2007
  • Understanding the spin polarization (P) has been an ongoing research challenge. The $Co_{1-x}Mn_x$ (x=0.27, 1) and $Co_{1-x}Fe_x$ (x=0, 0.5, 1) films were prepared using UHV-MBE system. For these films, the magnetic properties and spin polarization were investigated using SQUID and Meservey-Tedrow technique, respectively. Although measured P is uncorrelated to the bulk magnetic moment (M) in Co-Fe and Ni-Fe alloy films, it correlates with M in some alloys such as Co-Mn and Ni-Cu. The results can be understood by the tunneling currents made up of the hybridized sp-d electrons near the Fermi-energy level. Our work shows the feasibility to tailor new materials with large P values.

Low Temperature Properties of Exchange-biased Magnetic Tunnel Junction

  • Lee, K. I.;J. G. Ha;S. Y. Bae;K. H. Shin
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.325-326
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    • 2000
  • Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

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Interface Engineering in Quasi-Magnetic Tunnel Junctions with an Organic Barrier

  • Choi, Deung-Jang;Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.185-189
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    • 2010
  • Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Interface Engineering in Superconducting Ultra-thin Film of Ga (Ga 극초박막의 계면특성과 초전도 물성제어에 대한 연구)

  • Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of the Korean Magnetics Society
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    • v.20 no.6
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    • pp.212-215
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    • 2010
  • Spin polarized tunneling studies were carried out with Al-Ga bilayer as a spin detector, by Meservey-Tedrow technique. The superconductor (SC)/Insulator (I)/Ferromagnet (FM) tunnel junctions were provided by ultra high vacuum molecular beam epitaxy (UHV-MBE) technique. The analysis of interfacial properties in the Al-Ga bilayer was also carried out by Auger electron spectroscopy. It was observed that the superconducting transition temperature and energy gap were raised in comparison with that of bulk Ga and pure ultrathin Al films. Current studies clearly show how one can modify the material properties at the interface just with a few monolayers.

Andreev Reflection in Metal- and Ferromagnet-d-wave Superconductor Tunnel Junctions

  • Kim, Sun-Mi;Lee, Kie-Jin;Hwang, Yun-Seok;Cha, Deok-Joon;Ishibashid, Takayuki
    • Progress in Superconductivity
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    • v.2 no.1
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    • pp.43-46
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    • 2000
  • We report on the tunneling spectroscopy of tunnel junctions using d-wave superconductor in relation to Andreev reflection. The zero bias conductance peak (ZBCP) which has maximum on [110] direction of ab-plane is observed on metal $Au/YBa_2Cu_3O_y$ tunnel junctions while it is suppressed on the ferromagnetic $Co/Au/YBa_2Cu_3O_y$ tunnel junctions. The effects of Andreev reflection on the differential conductance of each junction are dependent on the tunnel direction. For the $Co/Au/YBa_2Cu_3O_y$ junction, the suppression of Andreev reflection takes place by spin-polarized quasiparticles tunneling from a ferromagnetic material to a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state due to the d-wave symmetry of the pair potential is verified in high-$T_c$ superconductor.

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