• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.361-366
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• 1999

The life of AC PDP depends largely on the sputtering-resistant property of the protecting layer such as MgO thin-film. However, it is very difficult to measure the sputtering-resistant property in the stable driving conditions of AC PDP. In this paper we have suggested a high speed measurement technique of the sputtering-resistant property of MgO thin-film by applying the MgO thin-film as the target of RF magnetron sputtering system. We have also applied this method to the e-beam MgO and sputter-MgO and e-beam MgO superior to sputter-MgO 3 times over. Also, the relation of Xe gas partial pressure(X) and sputtered thickness(Y) was Y=3.4X+13.5.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1764-1766
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• 1998

One of the most important problems in the development of AC PDP is to make long life and more stable panels. It is well known that the life time of a panel strongly depends on the sputtering-resistant property of the protecting layer such as MgO. However, the sputtering rate is so low that it is very difficult to measure the sputtering-resistant property of MgO. This paper describes a high speed measurement technique to test the sputtering-resistant property of MgO thin film by the R.F. magnetron sputtering. In this case the MgO sample has been used as a target of sputtering process. Moreover, the MgO surface changed by ion-bombarding sputtering are also discussed with SEM photoes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1657-1658
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• 2006

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter. To solve these problems of CCFL, EEFL (External Electrode Fluorescent Lamp) is introduced. Because electrode of EEFL is on the outer surface of discharge tube, the electrode is perfectly prevented from the sputtering by accelerated ions. And it is possible to drive the many CCFLs at the same time, because EEFL shows the positively resistant characteristic. But EEFL has the large non-radiative power loss in sheath. In this study the novel electrode structure was introduced in order to reduce non-radiative power loss in sheath of EEFL. The novel electrode structure comes from the idea to combine conceptually capacitive discharge with inductive discharge. Thus, this study verifies the change in the optical characteristics according to the change in electrode structure through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL electrode structure and brightness by measuring the optical characteristics.