• 한국결정성장학회지
• /
• 제15권4호
• /
• pp.135-140
• /
• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• 한국정밀공학회지
• /
• 제31권10호
• /
• pp.947-954
• /
• 2014

Performance of next generation susceptor is affected by temperature uniformity in order to produce reliably large-sized flat panel display. In this paper, we propose a learning estimation model of susceptor to predict and appropriately assess the temperature uniformity. Artificial Neural Networks (ANNs) and Support Vector Machines (SVMs) are compared for the suitability of the learning estimation model. It is proved that SVMs provides more suitable verification of uniformity modeling than ANNs during each stage of temperature variations. Practical procedure for uniformity estimation of susceptor temperature was developed using the SVMs prediction algorithm.

• 한국포장학회지
• /
• 제26권3호
• /
• pp.133-138
• /
• 2020

As HMR (home meal replacement) food market grows rapidly, a new packaging with more HMR specialized functions is highly required to promote consumers' convenience. A susceptor is defined as a material generating heat by absorbing electromagnetic energy such typically as radiofrequency or microwave radiation. In microwave cooking, susceptors are made of conductive metal thin film deposited on paper or plastic sheet and have generally been used to help crispen or brown foods by converting microwave energy into heat. This mini review article deals with current status of microwave susceptor packaging including commercial products, technical theory, types of susceptor and a test method for heating performance.

• 한국산학기술학회논문지
• /
• 제16권6호
• /
• pp.3714-3721
• /
• 2015

서셉터 히터에서 쉬스 열선을 사용하는 방법이 일반화되어 있지만, 대면적 초고온 조건에서는 서셉터의 온도 균일도 성능 저하의 문제가 있다. 본 연구에서는 온도균일도 성능을 향상시킬 수 있도록 판형 형태의 열선을 기본으로 새로운 서셉터를 설계하여 프로토타입을 개발하였다. 표면 온도 $450^{\circ}C$의 고온에서 1.4% 이내로 온도 균일도가 시제작된 서셉터에서 검증될 수 있었다. 또한 온도 학습 데이터를 이용하여 측정 온도 데이터를 예측할 수 있는 커널 회귀 알고리즘을 개발하고, 이러한 예측 데이터와 측정 데이터의 비교 분석으로 균일도 측정 온도의 신뢰성을 확인할 수 있었다.

• Journal of Electrochemical Science and Technology
• /
• 제13권3호
• /
• pp.390-397
• /
• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.1475-1480
• /
• 2004

Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.67-72
• /
• 2003

Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

• Korean Chemical Engineering Research
• /
• 제57권4호
• /
• pp.553-558
• /
• 2019

본 연구에서는 슬립캐스팅 성형법을 이용하여 실린더형 $MoSi_2$계 세라믹 서스셉터를 개발하여 고온 유도가열에 적용시켰다. $MoSi_2$계 소재는 SHS법(Self-propagating High-temperature Synthesis)으로 합성하였고 XRD 분석을 통해 합성된 상과 결정구조를 확인하였다. 합성된 소재로 실린더 성형체를 제작하기 위해 슬립캐스팅을 진행하였고 슬립의 고형분 함량 및 유지시간을 조절하여 실린더 성형체의 두께를 제어하였다. 최종적으로 성형체 소결을 통해 유도가열 발열체를 제작하였고 열처리과정 중 표면에 형성된 $SiO_2$층은 SEM/EDS 분석을 통해 확인하였다. 서스셉터로서의 가열성능을 평가하기 위해 유도가열기로 일정한 출력을 인가하였을 때 $(Mo,W)Si_2$ 실린더 서스셉터의 표면온도를 측정하여 출력 2 kW를 인가하였을 때 발열특성을 분석하였으며, 서스셉터 표면의 최고 온도는 $1457^{\circ}C$, 평균 승온속도는 $19^{\circ}C/s$로 우수한 가열 특성을 나타냈다.

• 한국정밀공학회지
• /
• 제19권8호
• /
• pp.92-99
• /
• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• 항공우주시스템공학회지
• /
• 제16권1호
• /
• pp.12-16
• /
• 2022

유도 용접은 비접촉식으로 깨끗하고 빠른 공정으로 현재 주목받고 있다. 하지만 열가소성 수지는 전자기장에 영향을 받지 않기 때문에 유도 용접은 서셉터(Susceptor)라는 발열체가 필요하다. 고품질 접합을 목표로 연구가 진행되고 있지만, 결국 발열체라는 이물질이 들어가기 때문에 기준이 필요하다. 시편의 제작과 시험은 ASTM D5868에 근거하여 진행된다. 본 논문에서 평가 기준은 용접된 접합면의 상태와 기공률, 전단강도로 총 3가지를 근거로 판단할 것을 제안한다. 용접되는 접착면은 용융되고 냉각되면서 고형화가 되기 때문에 급격한 온도 변화는 기공을 발생시킬 수 있다. 또한 가열이 균일하지 않다면 원하는 성능을 기대하기 힘들다. PA6 (CF 30%) 엔지니어링 플라스틱을 이용하여 서셉터 제작과 유도 용접 그리고 성능 검증으로 진행하였다.