• Journal of the Korean Society of Combustion
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• v.4 no.2
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• pp.97-108
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• 1999

This numerical study was to investigate the effect of $CO_2$ addition on the structures and NOx formation characteristics in $CH_4$ counterflow diffusion flame. The importance of radiation effect was identified and $CO_2$ addition effect was investigated in terms of thermal and chemical reaction effect. Also the causes of NOx reduction were clarified by separation method of each formation mechanisms. The results were as follows : The radiation effect was intensified by $CO_2$ addition. Thermal effect mainly contributed to the changes in flame structure and the amount of NO formation but the chemical reaction effect also cannot be neglected. The reduction of thermal NO was dominant with respect to reduction rate, but that of prompt NO was dominant with respect to total amount.

• Journal of Fisheries and Marine Sciences Education
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• v.17 no.2
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• pp.145-154
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• 2005

It is necessary to develop new air-conditioning method which can be satisfied individual separated space and request of occupants. The indoor thermal environment and flow field are investigated both experimentally and numerically. This study concentrated on analysis of indoor thermal environment by diffusion direction of ceiling type air conditioner of the classroom. The velocity and temperature distribution of air in the room calculated by 3-dimensional method, which include the effect of insulation of the building and outdoor state. This analysis shows that optimum diffusion direction is $30^{\circ}$ to increase thermal comfort in winter and optimum diffusion direction is $15^{\circ}$ to increase thermal comfort in summer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.49-60
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• 1999

The protective oxide scales and coatings formed on high temperature materials must be preserved in high temperature atmosphere. And the thermal stresses induced by thermal cycling and the growth stresses by the formation of oxide scales can cause the loss of adherence and spalling of the oxide scales and coated layers. Among the coating processes Al diffusion coating is favored due to thermochemical stability and superior adherence in an hostile atmosphere. In this study, protective oxide forming element, Al was coated on Ni, Inconel 600 and 690 by diffusion coating process varying coating temperature and time. And the surface stability and adherence of oxide scales formed on those Al diffusion coated materials were evaluated by thermal cycling test. Al diffusion coated specimens showed superior cyclic oxidation resistance compared to bare ones and specimens coated for longer period had better cyclic oxidation resistance, due to the abundant amount of Al in the coated layer. Meanwhile Al diffusion coated Inconel 600 and 690 showed improved cyclic oxidation resistance by the effect of Al in the coated layer and Cr in the substrate. Comparing both Al diffusion coated Inconel 600 and 690, Al diffusion coated Inconel 690 maintained better adhesion between coated layer and substrate by virtue of the bridging effect resulting from the segregation of Cr in the interdiffusion zone.

• Journal of Computational Design and Engineering
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• v.3 no.4
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• pp.349-362
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• 2016

The numerical solutions of unsteady hydromagnetic natural convection Couette flow of a viscous, incompressible and electrically conducting fluid between the two vertical parallel plates in the presence of thermal radiation, thermal diffusion and diffusion thermo are obtained here. The fundamental dimensionless governing coupled linear partial differential equations for impulsive movement and uniformly accelerated movement of the plate were solved by an efficient Finite Element Method. Computations were performed for a wide range of the governing flow parameters, viz., Thermal diffusion (Soret) and Diffusion thermo (Dufour) parameters, Magnetic field parameter, Prandtl number, Thermal radiation and Schmidt number. The effects of these flow parameters on the velocity (u), temperature (${\theta}$) and Concentration (${\phi}$) are shown graphically. Also the effects of these pertinent parameters on the skin-friction, the rate of heat and mass transfer are obtained and discussed numerically through tabular forms. These are in good agreement with earlier reported studies. Analysis indicates that the fluid velocity is an increasing function of Grashof numbers for heat and mass transfer, Soret and Dufour numbers whereas the Magnetic parameter, Thermal radiation parameter, Prandtl number and Schmidt number lead to reduction of the velocity profiles. Also, it is noticed that the rate of heat transfer coefficient and temperature profiles increase with decrease in the thermal radiation parameter and Prandtl number, whereas the reverse effect is observed with increase of Dufour number. Further, the concentration profiles increase with increase in the Soret number whereas reverse effect is seen by increasing the values of the Schmidt number.

• Laser Solutions
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• v.4 no.3
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• pp.40-44
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• 2001

Microbump formation during CO$_2$ laser texturing of glass substrates is examined in this paper. Experimental results show that different bump shapes (dome-shaped, with a central dimple, and with a peripheral rim) are generated depending on the laser fluence. A theoretical model for the process is suggested based on thermoelastic behavior but limited only to the dome-shaped bump. The dimensions (maximum height and base area) of the bump shows a logarithmic dependence on laser fluence as expected from the theory. Numerical computation reveals that the effect of thermal diffusion is not negligible for relatively long laser pulses.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Steel and Composite Structures
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• v.36 no.3
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• pp.249-259
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• 2020

In this work, a novel three-dimensional model in the generalized thermoelasticity for a homogeneous an isotropic medium was investigated with diffusion, under the effect of thermal loading due to laser pulse in the context of Green-Lindsay theory was investigated. The normal mode analysis technique is used to solve the resulting non-dimensional equations of the problem. Numerical results for the displacement, the thermal stress, the strain, the temperature, the mass concentration, and the chemical potential distributions are represented graphically to display the effect of the thermal loading due to laser pulse and the relaxation time on the resulting quantities. Comparisons are made within the theory in the presence and absence of laser pulse.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.949-955
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• 2000

Numerical study with detailed chemistry has been conducted to investigate the NOx formation and structure in $CH_4/Air-CO_2$ counterflow diffusion flames. The importance of radiation effect is identified and the role of $CO_2$ addition is addressed to thermal and chemical reaction effects, which can be precisely specified through the introduction of an imaginary species. Also NO separation technique is utilized to distinguish the contribution of thermal and prompt NO formation mechanisms. The results are as follows : The radiation effect is dominant at low strain rates and it is intensified by $CO_2$ addition. Thermal effect mainly contributes to the changes in flame structure and the amount of NO formation but the chemical reaction effect also cannot be neglected. It is noted that flame structure is changed considerably due to the addition of $CO_2$ in such a manner that the path of methane oxidation prefers to take $CH_4 {\rightarrow}CH_3{\rightarrow}C_2H_6{\rightarrow}C_2H_5$ instead of $CH_4 {\rightarrow}CH_3{\rightarrow}CH_2{\rightarrow}CH$. At low strain rate(a=10) the reduction of thermal NO is dominant with respect to reduction rate, but that of prompt NO is dominant with respect to total amount.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.