• Title/Summary/Keyword: thick film

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Thick-Film Strain-gage Ceramic-Pressure Sensor (세라믹 다이어프램을 이용한 후막 스트레인 게이지 압력센서)

  • 이성재;박하용;민남기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.987-993
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    • 2001
  • In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

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On Atmospheres for Firing the Thick Film Coper Conductors (Thick Film Copper Conductor 의 소결과 소성 분위기)

  • Lee, Joon
    • Applied Chemistry for Engineering
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    • v.2 no.3
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    • pp.193-198
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    • 1991
  • Thick film copper conductors are of considerable interest in thick film industries because of both the potential cost saving compared to the noble metal conductors and the favorable properties in electrical conductivity, solderability, solder leach resistance and wire bondability, However, formation of the excellent copper thick film is a lot complicated due to easily oxidizing property of copper at high temperature. In order to get favorable thick film copper conductor, hybrid microcircuit industry utilizes majorly three kinds of firing atmosphere, such as nitrogen atmosphere, reactive atmosphere and air atmosphere. The processes and the three atmospheres for firing thick film copper conductor were extensively reviewed in this article.

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Formation of MgO Thick Film Layer for AC-PDP via Electrophoresis Deposition of Nano-sized MgO Powders

  • Ko, Min-Soo;Kim, Yong-Seog
    • Journal of Information Display
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    • v.8 no.2
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    • pp.25-31
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    • 2007
  • MgO thick film for ac-PDPs was formed via electrophoresis deposition process and its effect on luminance and luminance efficiency were evaluated. The electrophoresis deposition process of MgO thick film was optimized through parametric study and defects levels in MgO powders was evaluated using cathodoluminescence spectra measurements. The results demonstrate a possibility of using MgO thick film as electron emission layer for ac-PDPs.

Fabrication and Characterization of Thermoelectric Thick Film by Using Bi-Te-Sb Powders

  • Yu, Ji-Hun;Bae, Seung-Chul;Ha, Gook-Hyun;Kim, Ook-Jung;Lee, Gil-Gun
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.430-431
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    • 2006
  • Thermoelectric thick film was fabricated by screen printing process with using p-type Bi-Te-Sb powders. The powder was synthesized by melting, milling and sintering process and hydrogen reduced to enhance the thermoelectric property. The thick film of Bi-Te-Sb powder was fabricated by screen printing method and baked at the optimized conditions. The thermal conductivity, the electrical resistivity and Seeback coefficient of thick film were measured and the thermoelectric performance was analyzed in terms of film characteristics and its microstructure. Finally, the feasibility of thermoelectric thick film into micro cooling device on CPU chip was discussed in this study.

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Thermal Behaviors of Ag Conductive Thick Film with Firing Temperature for Plasma Display Panel (PDP용 Ag 전도성 후막의 열적거동)

  • Hwang, Seong-Jin;Lee, Sang-Wook;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.278-278
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    • 2007
  • Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

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Sensing Mechanism Property of $RuO_2$ Thick Film Resistor. ($RuO_2$ 후막저항을 이용한 압력센서의 출력특성 개선)

  • Lee, Seong-Jae;Park, Ha-Young;Min, Nam-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.350-351
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    • 2006
  • Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.

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High-Ic YBCO thick film fabricated by the MOD process (MOD 공정으로 제조된 고임계전류 YBCO 후막)

  • Shin, Geo-Myung;Song, Kyu-Jung;Moon, Seung-Hyun;Yoo, Sang-Im
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.1
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    • pp.6-9
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    • 2008
  • We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.

Effect of Screen Printing and Sintering Conditions on Properties of Thick Film Resistor on AlN Substrate (인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향)

  • Koo, Bon Keup
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.344-349
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    • 2014
  • $RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

Structure and Properties of Polymer Infiltrated Alumina Thick film via Inkjet Printing Process (잉크젯 프린팅 공정에 의한 유전체 후막의 제조 및 특성)

  • Jang, Hun-Woo;Koo, Eun-Hae;Kim, Ji-Hoon;Kim, Hyo-Tae;Yoon, Young-Joon;Hwang, Hae-Jin;Kim, Jong-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.4
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    • pp.297-302
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    • 2009
  • We have successfully fabricated the alumina thick films using inkjet printing processes without a high temperature sintering process. Alumina suspension as dielectric ink was formulated by combining nano-sized alumina powders with an anionic polymer dispersant in formamide/water as co-solvent. The thickness of the printed alumina thick film was measured at around 5 um by field emission scanning electron microscope. The calculated packing density of 68.5 % from the printed alumina thick film was much higher than the same films fabricated by conventional casting or dip coating processes. Q factor of the dielectrics thick film infiltrated with cyanate ester resin was evaluated by impedance analyzer.

The Structural properties of PZT thick film with preparation condition states (제작조건에 따른 PZT후막의 구조적 특성)

  • Kang, Jung-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Lee, Sang-Heon;Lee, Young-Hie;Bae, Seon-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.142-145
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    • 2004
  • [ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

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