• Title/Summary/Keyword: thin film mesh grid

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Suppression of silicon clusters using a grid mesh under DC bias

  • Kim, Yonwon;Kang, Jun
    • Journal of Advanced Marine Engineering and Technology
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    • v.41 no.2
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    • pp.146-149
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    • 2017
  • Si clusters generated during the plasma chemical vapor deposition (CVD) process have a great influence on the quality of the fabricated films. In particular, in hydrogenated amorphous silicon thin films (a-Si:H) used for thin film solar cells, Si clusters are mainly responsible for light-induced degradation. In this study, we investigated the amount of clusters incorporated into thin films using a quartz crystal microbalance (QCM) and specially designed cluster eliminating filters, and investigated the effect of the DC grid mesh in preventing cluster incorporation. Experimental results showed that as the applied voltage of the grid mesh, which is placed between the electrode and the QCM, decreased, the number of clusters incorporated into the film decreased. This is due to the electrostatic force from the grid mesh bias, and this method is expected to contribute to the fabrication of high-quality thin films by preventing Si cluster incorporation.

Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film (SIMS 분석조건이 Bismuth Titanate 박막의 깊이방향 조성 해석에 미치는 영향)

  • Kim, Jae Nam;Lee, Sang Up;Kwun, Hyug Dae;Shin, Kwang Soo;Chon, Uong;Park, Byung Ok;Cho, Sang Hi
    • Analytical Science and Technology
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    • v.14 no.6
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    • pp.486-493
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    • 2001
  • The effect of SIMS analysis conditions such as mesh grid, offset voltage and ion species on the in-depth profile for bismuth titanate thin film was examined in terms of charging effect and detection limit. The results shows that the use of offset voltage -40 V reduces the charging effect and the detection limit. The employment of mesh grid in sample preparation leads to the reduction of the charging effect in small amount, but deteriorate the detection limit. Utilization of primary $O^-$ ion for SIMS analysis of bismuth titanate thin film showed almost the same effect as using offset voltage -40 V. However, it takes approximately triple acquisition time than using $O_2{^+}$ ion due to the poor beam current of the source in the experiment.

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A Study on the Development of CAD System for VFD Element Tools (형광 표시관 부품의 금형 자동설계 시스템에 관한 연구)

  • 박상봉
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.04a
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    • pp.724-728
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    • 1997
  • A CAD system of grid element for vacuum fluorescent disply has been developed. In order to reduce design man-houre and human erros, it is used to automate the design process using a knowledge base system. In the case of VFD product design, the most important consideration is the short-life cycle. So the development of CAD system for VFD product is needed. The developed system is based on the knowledge base system which is involved in a lot of expert's technology in the practice field. Using C-language under the HP-UNIX system, CIS customer language of the EXCESS CAD/CAM is used as the overall CAD environment. Results of this system will provide effective aids to the designer in this field

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The Effects of Substrate Temperature on Properties of Carbon Nanotube Films Deposited by RF Plasma CVD (RF Plasma CVD법에 의해 증착된 카본나노튜브(CNT)의 특성에 대한 기판 온도의 영향)

  • Kim, Dong-Sun
    • Korean Chemical Engineering Research
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    • v.46 no.1
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    • pp.50-55
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    • 2008
  • Carbon Nanotube (CNT) films were deposited with varying deposition temperature by RF plasma CVD on Fe catalysts deposited onto $SiO_2$ films grown thermally on the silicon wafer using $C_2H_2$ and $H_2$ gases. The Fe catalysts on silicon oxide film were made by RF magnetron sputtering. The grounded grid mesh cover on the substrate holder was used for depositing CNT thin films with high purity. The surface morphologies and chemical structure of deposited CNT films were characterized using SEM, Raman, XPS and TEM. It was observed that deposited CNTs films were carbon fiber type having Bamboo-like multiwall structure and CNT film grown at $600^{\circ}C$ was more dense than that at $550^{\circ}C$, but become less dense at $650^{\circ}C$.