• Title/Summary/Keyword: thin-cathode

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Fabrication of Li2MnSiO4 Cathode Thin Films by RF Sputtering for Thin Film Li-ion Secondary Batteries and Their Electrochemical Properties (RF 스퍼터법을 이용한 Li2MnSiO4 리튬 이차전지 양극활물질 박막 제조 및 전기화학적 특성)

  • Chae, Suman;Shim, Joongpyo;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.447-453
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    • 2017
  • In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

Thin film encapsulation of thin-cathode organic electroluminescent devices

  • Lee, Shih-Nan;Hwang, Shiao-Wen;Chen, Chin H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1034-1037
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    • 2006
  • We have developed a novel thin film encapsulation method for thin-cathode OLED by introducing organic (not polymer)/inorganic multiple thin films to protect device, which is shown to slow down the permeation rate of moisture and oxygen. From the stability test of devices, the projected lifetime of thin-cathode OLED device with thin film encapsulation was similarly to that with glass lid encapsulation.

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Thin films made by magnetron sputtering cathode with wide target erosion (고효율 마그네트론 스퍼트링 캐소드의 설계 및 박막 제작 특성)

  • Park, Jang-Sick;Lee, Won-Geon;Jung, Min-Gi;Park, Lee-Soon;An, Chang-Ku
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.365-366
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    • 2007
  • High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

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Laterally Encapsulated Cathode Structure for DC Plasma Display Panels

  • Esfahani, M.Mokhlespour;Mohajerzadeh, S.;Goodarzi, A.;Rouhi, N.;Tarighat, R.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1233-1236
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    • 2005
  • We report a novel approach for encapsulating of cathode electrodes in DC plasma pixels. Anode and cathode electrodes are laterally placed on a single substrate. The encapsulated electrode minimizes the sputtering of the cathode without significantly altering the turn-on voltage-pressure characteristics. An abnormal glow in current-voltage characteristics is also observed.

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A Study on The Fabrication and Electrochemical Characterization of Amorphous Vanadium Oxide Thin Films for Thin Film Micro-Battery (마이크로 박막 전지용 비정질 산화바나듐 박막의 제작 및 전기화학적 특성에 관한 연구)

  • 전은정;신영화;남상철;조원일;윤영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.634-637
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    • 1999
  • The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

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Suppressing Lateral Conduction Loss of Thin-film Cathode by Inserting a Denser Bridging Layer

  • Park, Jung Hoon;Lee, Seung Hwan;Kim, Hyoungchul;Yoon, Kyung Joong;Lee, Jong-Ho;Han, Seung Min;Son, Ji-Won
    • Journal of the Korean Ceramic Society
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    • v.52 no.5
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    • pp.304-307
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    • 2015
  • To reduce the lateral conduction loss of thin-film-processed cathodes, the microstructure of the thin-film cathode is engineered to contain a denser bridging layer in the middle. By doing so, the characteristic crack-like pores that separate the cathode domains in thin-film-processed cathodes and hamper lateral conduction are better connected and, as a result, the sheet resistance of the cathode is effectively reduced by a factor of 5. This induces suppression of the lateral conduction loss and expansion of the effective current collecting area; the cell performance is improved by more than 30%.

Design and Preparation of Cathode for Large Sputtering Thin Film (대면적 스퍼터링 박막 제작을 위한 캐소드 설계 및 제작)

  • Kim, Yujin;Kim, Sangmo;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.53-57
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    • 2019
  • In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

Characteristics of Nickel Oxide Thin Film Manufactured by Reactive Magnetron Sputtering Method (반응성 마그네트론 스퍼터링법에 의한 Nickel Oxide 박막 제작 특성에 관한 연구)

  • Kim, Gi-Bum;Hwang, Yun-Sik;Kim, Yeung-Shik;Park, Jang-Sick
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.1
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    • pp.29-34
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    • 2008
  • In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

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Safe Decomposition of the Vehicle Waste Battery Module and Development of Separation Process of Cathode Active Material from Aluminum Thin Film (자동차용 폐 리튬 이차전지 모듈의 안정적 해체와 알루미늄 박막으로부터 양극활물질의 분리공정 개발)

  • Kim, Younjung;Oh, In-Gyung;Hong, Yong Pyo;Ryoo, Keon Sang
    • Journal of the Korean Chemical Society
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    • v.63 no.6
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    • pp.440-445
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    • 2019
  • It has developed a method that can recover efficiently the reproducible resources from the vehicle waste lithium second battery module. Module cell consists of copper thin film, aluminum thin film and diaphragm made with polymer between these thin films. Cell was disassembled completely without any damage in glove box and through several steps. Preferentially, cathode active material was separated from aluminum thin film at heat treatment of 400 ℃. The retrieved cathode active material was then obtained as high purity after calcining at 800 ℃ to remove residual carbon. Based on this study, it was found that rare metals such as Co, Ni, Mn and Li made up of cathode active material could recover above 80% from aluminum thin film.

Pt Doping Mechanism of Vanadium Oxide Cathode Film Grown on ITO Glass for Thin Film Battery

  • Kim, Han-Ki;Seong, Tae-Yeon;Jeon, Eun-Jeong;Cho, Won-Il;Yoon, Young-Soo
    • Journal of the Korean Ceramic Society
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    • v.38 no.1
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    • pp.100-105
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    • 2001
  • An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

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