• 대한전자공학회논문지SD
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• 제40권11호
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• pp.37-44
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• 2003

다수의 입력을 필요로 하는 전류모드 Max 회로에서 고주파 왜곡을 효과적으로 억제할 수 있는 trans conductance 조정 방법을 제안하였다. Max 회로에 인가되는 입력 신호의 개수가 증가하면, 기생 커패시턴스는 입력 단의 개수에 비례하여 누적되게 된다. 본 연구에서는 Max 회로의 왜곡 신호의 크기가 누적된 기생 커패시턴스와 출력신호의 변화율에 비례하며, 공통 다이오드결선 트랜지스터의 transconductance 값에 반비례하게 됨을 밝혔다. 왜곡 억제를 위한 효과적인 방안으로 공통 다이오드결선 트랜지스터의 transconductance 값을 최소화하는 방안을 제시하였다. 이 방법의 효용성은 다양한 수의 입력 신호를 갖는 전류모드 Max 회로에 대해서 HSPICE 시뮬레이션을 통해 입증하였다.

• 전기학회논문지
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• 제58권8호
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• pp.1644-1650
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• 2009

An improved guarding circuit is applied to a transconductance driven-right-leg circuit to decrease common-mode current at measurement electrodes due to power-line interference. After showing conventional guarding circuit is instable due to gain-peaking when used with a transconductance DRL circuit, the effect of the proposed guarding circuit modified to suppress the gain-peaking by inserting a series resistor between shields and a shield driver was analyzed. It is shown that, besides stability, the proposed guarding circuit provides two other advantages: 1) The gain of the shield driver can be set to be unit nominally. 2) The loop gain of the transconductance DRL loop can be increased due to pole-zero canceling. The proposed circuit was implemented and the advantages were confirmed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.563-566
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• 1988

A current-controlled CMOS operational transconductance amplifier(OTA), whose transconductance is directly proportional to the DC bias current, has been developed for many electronic circuit applications. It features that its transconductance is insensitive to temperature unlike that of the bipolar OTA. This property makes it possible to use the proposed OTA as a basic buliding block in electrically variable circuit design. The SPICE simulation shows that the conversion sensitivity of the circuit is 44.62 mv /${\mu}A$ and the linearity error less than 0.54 % over a bias current range from 2 ${\mu}A$ to 120 ${\mu}A$ when the output is loaded with a 1${\Omega}$ resistor.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1053-1056
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• 2003

A distortion suppression technology for employing multiple inputs in 3n+1 type current mode Max circuit is proposed using the adjustment of transconductance. If the number of inputs in current mode Max circuit increases, the high frequency distortion in the output signal grows. In this paper, it has been disclosed that the distortion in the multiple input Max circuit is proportional to sum of parasitic capacitance in input terminals, to the derivative of the output signal and also to the inverse of transconductance of the common diode-connected transistor. The proposed idea is by employing as larger transconductance of the common diode-connected transistor as possible. The effectiveness of the proposed idea has been proved through the HSPICE simulation.

• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.274-280
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• 2001

This paper presents transconductance (g$\_$m/( characteristics of GaAs MESFET's at high temperatures ranging from room temperature to 350$\^{C}$. GaAs MESFET of 0.3x750[㎛] gate dimension has been used to obtain the experimental data. Gate to source voltage(V$\_$GS/) has been controlled to obtain the temperature dependent characteristics for maximum transconductance g$\_$mmax/ of the device. Furthermore g$\_$mmax/ and expected g$\_$m/ have been traced with temperatures ranging from room temperature to 350$\^{C}$ also by compensating for C$\_$GS/ to maintain the optimum operation of the device. From the results, V$\_$GS/decreases as the operating temperature increases for optimum operation of the transconductance. Finally V$\_$GS/ has been optimized to trace g$\_$mmax/ and enhances the decreased g$\_$m/ with different temperatures.

• 대한전자공학회논문지
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• 제27권1호
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• pp.74-80
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• 1990

The transconductance of short channel LDD MOSFETs in the saturation region (high Vd)has shown different characteristics from that of conventional device. The transconductance in saturation regime of short channel LDD MOSFETs is reduced from maximum value at higher gate voltage. This decline is analyzed as the velocity saturation effects of carrier at LDD region but accurate analytical expressions for the drain current Idsat and the transconductance Gmsat in the saturation regime are still not in existence. Recently the drain current dependence of parasitic source resistance Rs has been modeled from the velocity saturation of carriers in LDD region. In this study, we approximate that Rmsat that Rs is linearly dependent on the applied gate voltage. Analytical expressions for Idsat and Gmsat obtained from this approximation show the same general behavior as experimental results of short channel LDD NMOSFETs.

• ETRI Journal
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• 제31권5호
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• pp.576-584
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• 2009

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 ${\mu}m$ CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 ${\mu}A/V$ to 165 ${\mu}A/V$) and a total harmonic distortion of -67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V.

• ETRI Journal
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• 제42권4호
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• pp.534-548
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• 2020

This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.

• 전기학회논문지
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• 제64권1호
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• pp.143-148
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• 2015

In this paper a new method is proposed for realizing active floating inductors from voltage differencing transconductance amplifier(VDTA) which is being studied nowadays. This proposed method employs only one VDTA and one transconductance for designing an active inductor from a passive floating inductor and implementing it to integrated circuits. The number of CMOS transistors can be considerably reduced from 6~18 as 1~3 gm circuits can be eliminated and even without R the design can be made, which can help in reducing the size of the circuit and power consumption. The proposed VDTA floating inductor was successfully used in constructing 1 MHz second order biquad active bandpass filter and bandwidth could be adjusted from 77kHz~1.59MHz by the changes made in gm from 6uS~20uS.