• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.28-28
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• 2003

• Progress in Superconductivity
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• v.5 no.1
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• pp.5-8
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• 2003

We studied the effect of spin injection on tunneling conduction properties of intrinsic Josephson junctions formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8＋x}$ single crystals. properties of an identical stack (10${\times}$5.0${\times}$0.030 $\mu\textrm{m}^3$) of intrinsic Josephson junctions were compared for the bias current injected through Au and Co electrodes. The suppression of the superconducting gap in the $_2$ double layers and the interlayer Josephson critical current was manifested in the tunneling current-voltage characteristics of the stacks. This effect appears to be caused by the pair breaking associated with spin-polarized carriers injected from the Co electrode into the $Bi_2$$Sr_2$$_2$O$CaCu_{ 8＋x}$ single crystal. This study may provide valuable information on clarifying the mechanism of high- $T_{c}$ superconductivity.y.y.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.79-87
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• 1998

Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N$_{2}$O gas, and were chaacterized via a fowler-nordheim tunneling(FNT) electron injection technique. Electrical characteristics of nitrided gate oxides were superior to that of control oxides.Further, the FNT electron injection into the nitrided gate oxides reveals that gate oxides degrade more both if electrons were foreced to inject from the gate metal and if thicker nitrided gate oxides were used in the thickness range of 90~130.angs.. Models are suggested to explain these phenomena.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.412-413
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• 2006

The electrical conduction mechanism of ITO / Terbium tris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$]/Mg/Al devices has been investigated. The calculation of electric field in single layer organic layer between cathode and anode shows the uniform distribution for the electron injection barrier of over 1.4 eV. The measured current-voltage curve shows well matching with the calculated curve based on the tunneling injection of electron under the uniform distribution of electric field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.353-353
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• 2010

Alcohol is a vesatile polar solvent for molecules. As a preparation to deposit large molecules, we studied interaction of solvent molecules on metallic surface. in this work, we report on methanol adsorption on NiAl(110) with scanning tunneling microscopy (STM). These alcohol solvent molecules were deposited by a pulse injection method suitable for deposition of thermally unstable molecules. The injection of liquid alcohol onto the substrate in UHV was performed by using a high-speed solenoid valve with the back-pressure reduced down to 100 Torr. This technique allowed precise control over the amount of dosing of molecules to less than 1 L. Alcohol-induced features, attributed to methoxy, were found on bare NiAl(110) surface.

• Progress in Superconductivity
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• v.3 no.1
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• pp.41-44
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• 2001

We report the current transport properties of a normal metal/organic conductor/ superconductor tunnel junction as a novel high- $T_{c}$ superconducting three terminal device. The organic copper (II) phthalocyanine (Cu-Pc) layer was used far a polaronic quasiparticle (QP) injector. The injection of polaronic QP from the Cu-Pc interlayer into a superconductor $Bi_2$$Sr_2$$CaCu_2$ $O_{8+}$ $\delta$/(BSCCO) thin film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. The tunneling spectroscopy of an Au/cu-PC/BSCCO junction exhibited a zero bias conductance peak which may be due to Andreev reflection at a Cu-Pc/d-wave superconductor junction.n..

• Progress in Superconductivity
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• v.4 no.2
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• pp.99-103
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• 2003

We studied the nonequilibrium superconductivity due to tunnel injection of polaronic quasiparticle (QP) from organic photoconductor. The transport properties of an organic copper (II) phthalocyanine (Cu -Pc)/d-wave superconductor were investigated in dark and under ultraviolet (UV) radiation for performance of a novel $high -T_{c}$ superconducting three terminal device. We observed that the injection of polaronic QP from the organic Cu -Pc film into the $Bi_2$S $r_2$$CaCuO_{8+{\delta}}$ film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. We could increase the current gain by UV excitation of the organic photoconductor injector. The tunneling spectroscopy of a Cu -Pc/BSCCO junction exhibited a small enhancement of the zero bias conductance peak under the W excitation. The above phenomena are of importance in developing optically controlled three terminal superconducting device.e.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.157-163
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• 2002

A new flash EEPROM device with p^＋ poly-Si control gate and n^＋ poly-Si floating side gate was fabricated and characterized. The n^＋ poly-Si gate is formed on both sides of the p^＋ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.25-25
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• 2001