• 한국생활과학회지
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• 제19권6호
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• pp.1071-1082
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• 2010

This study examined the effects of underwear brand identity color on brand equity. A self-administered questionnaire mainly consisted of BI color, brand image, and brand equity for underwear. Five underwear brands (Calvin Klein, Yes, Solb, Venus, and Body Guard) were selected based on the frequency they were purchased in pilot study. To collect data, respondents were asked to choose a brand which they were most familiar with, and to assess BI color, brand image, and brand equity including cognitive value, emotional value and purchase intention. A total of 228 usable questionnaires were obtained from consumers aged 19 to 46. BI colors were classified into four color groups: Achromatic (white, black, gray), Vivid (red, blue, yellow), Pink, and Beige. Additionally, underwear brand images consisted of four factors: Sophisticated, Classic, Casual, and Elegant images. Findings showed significant differences in the four factors of brand image and cognitive brand value between the BI color groups. Also, the factor of cognitive value was higher for achromatic or beige brand color groups, than for vivid or pink color groups. Also, brand image factors had positive effects on cognitive or emotional brand value. Especially, the factor of emotional value was more likely to increase purchase intentions than cognitive value in the BI color groups. The implications for managerial decision marking in fashion marketing strategy were also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.50-54
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• 2002

Influences of bending strain on the critical current ($I_c$) in Ag-sheathed Bi-2223 superconducting tapes at 77K were investigated. The effect of bending mode on the bending strain characteristics was discussed in viewpoints of sample geometry, n-value and damage morphology. Especially, in this paper, we reported the $I_c$ behavior in Ag alloy sheathed Bi-2223 multifilamentary superconducting tapes under hard bending. As a result, $I_c$ degradation behavior of the hard bending appeared remarkably than the case of easy bending, but it did not influence greatly on the n-value.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.492-496
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• 2004

In this study, (0.96 －x)(PSN-PZT)－xBF－0.04 PNW＋0.3wt%MnO$_2$＋0.6wt%CuO ceramics were fabricated with the variations of the amount of BiFeO$_3$substitution and sintering temperature for the development of modified ceramics which can be sintered in the low temperature($\leq$100$0^{\circ}C$ ), and their microstructural, dielectric and piezoelectric characteristics were investigated. As the amount of BiFeO$_3$ substitution was increased, the density, mechanical quality factor(Q$_{m}$) and electromechanical coupling factor(k$_{p}$) showed the maximum value at each of sintering temperature. At sintering temperature of 98$0^{\circ}C$ and BiFeO$_3$substitution of 2 mol%, the density, dielectric constant and electromechanical coupling factor(k$_{p}$) showed the maximum value of 7.84 g/㎤, 1415 and 0.49, respectively. And at sintering temperature of 95$0^{\circ}C$ and BiFeO$_3$substitution of 3mol%, mechanical quality factor showed the maximum value of 1062. 1062.

• 전자공학회논문지A
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• 제32A권12호
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• pp.198-208
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• 1995

BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전자파학회논문지
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• 제15권9호
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• pp.826-834
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• 2004

본 논문에서는 소형이며 광대역 특성을 가지는 안테나를 위해 Bi$_2$O$_3$가 첨가된 BaTi$_4$$O_{9}$ 세라믹스를 이용하여 후막 모노폴 안테나를 제작하였다. 그 결과 첨가된 Bi가 치환되어 이차상인 Bi$_4$Ti$_3$O$_{12}$를 형성되었고 이에따라 높은 비유전율은 일정하였고 품질계수(Q$_{f}$${\times}$f)는 급격히 감소하였다. 안테나 특성에 있어서 비유전율보다는 품질 계수의 영향을 직접적으로 받았다. 대역폭을 측정한 결과 Bi$_2$O$_3$ 첨가량이 증가할수록 급격한 품질계수 감소와 함께, 대역폭은 16 %에서 33 %로 증가하였다. 이에 반하여 이득은 -0.8 dBi에서 -4.3 dBi로 감소하였다. 이로인해 방사 패턴은 Bi$_2$O$_3$ 미(未)첨가시 보다 낮은 dBi 값을 보여 주었다. 특히 방사 패턴을 측정 한 결과 무 지향성을 보여야 될 x-y면 방사 패턴의 경우 격자구조의 왜곡으로 인한 파장의 산란과 공기와 유전체의 경계면에서 높은 비유전율의 차이로 굴절이 일어나 심하게 왜곡되어 있었다. 그러나 낮은 품질계수로 인하여 모든 조성 범위에서 우수한 -10 dB 대역폭 특성을 보여주었다.주었다..

• 한국전자파학회논문지
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• 제14권6호
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• pp.558-566
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• 2003

Li$_2$CO$_3$가 첨가된 BiNbO$_4$ 세라믹스를 이용하여 후막 모노폴 안테나를 제작하였다. 그 결과 Li 이온이 Bi, Nb 이온과 결합하여 이온간의 거리를 증가시켰다. 이에 따라 이온 분극량이 증가하여 유전율은 증가하였지만 세라믹 내 격자구조의 왜곡이 심해져 유전손실이 증가하였다. 안테나 특성에 있어서는 유전율 보다는 품질계수(Q)의 영향을 직접적으로 받았다. 대역폭을 측정한 결과 Li$_2$CO$_3$ 첨가에 따른 급격한 품질계수의 저하와 함께 37 %에서 81.7 %까지 증가한 반면 안테나 이득은 -5.5 dBi 에서 -10.03 dBi까지 급격히 감소하였다. 이로 인해 방사패턴은 Li$_2$CO$_3$ 미(未)첨가 시 보다 낮은 dBi 값을 보여 주었다. 특히 무 지향성을 보여야될 x-y면 방사패턴의 경우 격자구조의 왜곡으로 인한 파장의 산란과 공기와 유전체의 경계면에서 높은 유전율 차이로 굴절이 일어나 심하게 왜곡되어 있었다. 그러나 낮은 품질계수(Q)로 인하여 모든 조성 범위에서 1 GHz 이상의 우수한 -10 dB 대역폭 특성을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Asia pacific journal of information systems
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• 제32권1호
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• pp.125-150
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• 2022

Technology companies launched their intelligent personal assistants (IPAs). IPAs not only provide individuals with a convenient way to interact with technology but also offer them the opportunity to interact with AI in a useful and meaningful form. Therefore, the global IPAs have experienced tremendous growth over the past decade. But maintaining continuous usage intention is still a massive challenge for developers and marketers and previous technology adoption models are not enough to explain continuous usage intention of IPAs. Thus, we adopted the bi-dimensional perspectives of utilitarian and hedonic value in this research model, and investigated how three characteristics of IPAs - anthropomorphism, autonomy, and intelligence - affect utilitarian value and hedonic value, which in turn continuous usage intentions. 227 data were collected from IPA users. The results showed that IPAs' continuous usage intention is significantly determined by both utilitarian and hedonic value, with the hedonic value being more prominent. In addition, the results showed that anthropomorphism and intelligence are the most important antecedents of utilitarian and hedonistic value. The results also illustrated that autonomy is a crucial predictor of utilitarian value rather than hedonistic value. Our work contributes to current research by widening the theoretical understanding of the effect of IPA characteristics on continuous usage intention through bi-dimensional values. Our paper also provides IPAs' developer and marketer guidelines for enhancing continuous usage intention.