• The korean journal of orthodontics
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• v.20 no.1
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• pp.135-156
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• 1990

This study was undertaken to investigate the difference of chin morphology and mandibular form in relation to different mandibular growth direction. The subject was divided into three group i.e., control group, vertical group, and horizontal group, according to the criteria of $Bj{\ddot{o}}rk$ sum, and each group was composed of 15 females and 15 males. Medial axis analysis in addition to the routine cephalometric analysis using P.I.A.S. (personal image analysing system) was carried out to find out the differences of mandibular morphology on each group. The results were as follows: 1. The area of symphysis was larger in horizontal growth group than that of vertical growth group. 2. Protruding chin area was also larger in horizontal growth group than that of vertical growth group. 3. There was a close correlationship between protruding chin area and other form of mandible. 4. Antegonial notch depth and ramus posterior contour depth was deeper in vertical growth group than in horizontal growth group, and antegonial notch depth was more influenced by anterior part of notch than posterior part of notch. 5. Mental medial axis and incisal medial axis length, in relation to corpus medial axis length was larger in vertical growth group than in horizontal growth group.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.51-57
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• 1985

Silicon single crystals were grown bynon-seeded vertical Brdgmen-Stockbarger technique. Optimum growth rate appeared 5mm/hr in the system. It was identified that the preferential orientation using by the optical microscope resulted in <100> direction.

• Asian Journal for Public Opinion Research
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• v.9 no.3
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• pp.266-292
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• 2021

Vertical growth is viewed as the solution to the problem of urban housing. The present study aims to be multifocal in approaching the phenomenon of apartment living in Lahore, Pakistan. The primary focus of the research was to evaluate the satisfaction with and favorability of vertical living among the dwellers; however, the research was extended to include the in-depth experiences of adolescents regarding privacy because it was observed that this age group was being neglected severely in the distribution of privacy in apartments, as well as in research. The data was first collected from 150 respondents through a survey, and then interviews of 10 adolescents were conducted to explore notion of privacy. The findings highlight that, despite being satisfied with the infrastructural aspects of the building, the residents do not prefer vertical living over horizontal housing. The adolescents in apartments also prefer horizontal housing over vertical living to avoid the feeling of crowdedness that is associated with vertical growth due to shared space and proximity. The utilization of spaces within apartments is associated with certain elements of development of the personality during this age. The findings of the present study can be helpful for sustainable vertical housing policy development and implementation.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.239-239
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• 2009

As we note the electric properties of carbon nanotube, we need to generate carbon nanotubes vertically. Generally, metal catalysts are used to synthesis carbon nanotubes. But through using DLC, dense patricles could be gotten easily. Compare to the case of using metal catalysts, the case of using DLC can conduct vertical grwoth of CNTs easily. In this paper, we changed growth temperature (550, 650, $7500^{\circ}C$) and growth time (3, 6, 9 min) in order to confirm synthesize vertical growth of CNTs on substrates.

• The korean journal of orthodontics
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• v.9 no.1
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• pp.23-35
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• 1979

The present study has the purpose of investigating various growth and developmental aspects of rabbit snout with the aid of metallic implantation and of improving on the indirect method of growth and developmental studies of its skull. Sixty-eight growing albino rabbits were used. A head holder, film holder, cephalometer, metallic implanting device and implant materials were designed and constructed by the author. Eight metallic pins were implanted with a metallic implanting device in the rabbit snout under general anesthesia. Two metallic pins were implanted on each side of the interfrontal suture and another two were put on each side of the internasal suture near the frontonasal suture. Serial cephalograms were taken with a two-week interval, using the head holder, film holder and cephalometer. Eight items of linear measurement were obtained from the film. On the base of the results of the study, the following conclusions are obtained: 1. The metallic implant method is better than the other indirect methods for growth and developmental studies of the rabbit skull. 2. Most of the vertical growth of the rabbit snout is due to sutural growth at the frontonasal suture and the horizontal growth is at the interfrontal and the internasal suture. 3. The vertical growth of the rabbit snout is greater than the horizontal growth. 4. The horizontal growth of the rabbit snout is greater at the nasal bone than at the frontal bone. 5. The amount of vertical growth of the rabbit snout is almost same at inner and outer side of the interfrontal and internasal suture line, 6. Growth rate of the sutural growth of the rabbit snout tends to decrease by the growth of the rabbit. 7. Implant materials do not disturb growth and development of the rabbit snout, except a slight trauma effect during the first week of metallic implantation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.1-7
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• 2006

Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• The Korean Journal of Ecology
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• v.17 no.3
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• pp.261-275
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• 1994

The annual ring widths of tree and the vertical distribution of fine roots were investigated at 33 sites of pitch pine forests in Seoul, its vicinity and rural areas. The annual ring widths among 16 - 20 year-old pitch pines in urban areas were significantly lower than those in rural areas. The annual ring widths for the latest 5 years (1985-1989) for the age class of 11-20, 21-30 and 31-40 year old pines increased in the following order for all the age classes: urban areas< suburbs