• 센서학회지
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• 제27권3호
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.273-274
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• 2007

영상 신호에서 Dynamic Range는 이미지가 포함하고 있는 휘도의 최소 레벨과 최대 레벨의 비이다. 이미지 촬상 장치가 표현할 수 있는 Dynamic Range는 한정되어 있기 때문에 한정된 범위를 벗어나는 영역에 대해서는 이미지의 왜곡 혹은 손실이 발생한다. 본 논문에서는 Line별로 다른 Integration Time을 적용하는 방법으로 영상의 계조 표현 범위를 넓게 향상시켜 Wide Dynamic Range를 갖는 영상을 얻는 방법을 기술한다.

• 센서학회지
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• 제26권2호
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• 센서학회지
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• 제26권4호
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• pp.223-227
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• 2017

Conventional CMOS image sensors (CISs) have a trade-off relationship between dynamic range and sensitivity. In addition, their sensitivity is determined by the photodiode capacitance. In this paper, CISs that consist of dual-sensitivity photodiodes in a unit pixel are proposed for achieving wide dynamic ranges. In the proposed CIS, signal charges are generated in the dual photodiodes during integration, and these generated signal charges are accumulated in the floating-diffusion node. The signal charges generated in the high-sensitivity photodiodes are transferred to the input of the comparator through an additional source follower, and the signal voltages converted by the source follower are compared with a reference voltage in the comparator. The output voltage of the comparator determines which photodiode is selected. Therefore, the proposed CIS composed of dual-sensitivity photodiodes extends the dynamic range according to the intensity of light. A $94{\times}150$ pixel array image sensor was designed using a conventional $0.18{\mu}m$ CMOS process and its performance was simulated.

• 센서학회지
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• 제30권2호
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• pp.76-81
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• 2021

In this study, we propose a machine vision system with a high object recognition rate. By utilizing a multiple-exposure image sensing technique, the proposed deep learning-based machine vision system can cover a wide light intensity range without further learning processes on the various light intensity range. If the proposed machine vision system fails to recognize object features, the system operates in a multiple-exposure sensing mode and detects the target object that is blocked in the near dark or bright region. Furthermore, short- and long-exposure images from the multiple-exposure sensing mode are synthesized to obtain accurate object feature information. That results in the generation of a wide dynamic range of image information. Even with the object recognition resources for the deep learning process with a light intensity range of only 23 dB, the prototype machine vision system with the multiple-exposure imaging method demonstrated an object recognition performance with a light intensity range of up to 96 dB.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 춘계학술대회논문집
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• pp.979-984
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• 2003

A Dynamic vibration absorber(DVA) is developed to reduce the excessive vibration of an optical disk drive(ODD) originated from the deriving range of an wobble disk and unbalanced disk. We design the material properties and shapes of the DVA by simulating Frequency response function(FRF) such as target frequency, mass of the DVA, stiffness of damper, damping coefficient, shape and dimension, analyze dynamic characteristics and provide its design guide line for suppressing the vibration of an optical disk derive. To examine the performance of the DVA, the vibration of the feeding system with DVA and without DAA are measured by using a three-axis accelerometer, PCB derive and Pulse analyzer. The result show that the proposed DVA reduces the vibration of wide range in ODD.

• 대한전자공학회논문지SP
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• 제45권6호
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• pp.117-124
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• 2008

이미지 센서의 물리적 한계 가운데 공간 해상도의 제약과 다이내믹 레인지의 제약을 극복하기 위한 방법 가운데 신호처리기법에 기반하여 여러 장의 저해상도 영상으로부터 고해상도 영상을 복원하는 것과, 다이내믹 레인지가 좁은 여러 장의 영상으로부터 넓은 다이내믹 레인지를 갖는 영상을 복원하는 방법이 있다. 하지만, 일반적으로 실제 영상을 획득하는 과정에서 공간 해상도와 다이내믹 레인지의 제약을 동시에 받게 되므로, 이 두 제약을 동시에 극복하는 연구가 필요하다. 본 논문에서는 영상 장치의 응답 함수의 추정과 함께 공간 해상도와 다이내믹 레이지를 동시에 향상시킬 수 있는 알고리즘을 제안한다. 이를 위해 영상의 공간 해상도 제한과, 다이내믹 레인지의 제약을 포함하는 영상 획득 과정을 모델링하고, 이 영상 획득 모델을 기반으로 하여 영상 입력 장치의 응답 함수를 추정하고, 영상의 공간 해상도와 다이내믹 레인지를 동시에 향상시킬 수 있는 알고리즘을 제안한다. 실험 결과를 통해 제안된 알고리즘이 기존의 고해상도 복읜 알고리즘과 와이드 다이내믹 레인지 영상 복원을 연속적으로 처리한 결과보다 시각적, 수치적으로 더 좋은 결과를 보여줌을 확인할 수 있다.

• 한국전자파학회논문지
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• 제25권11호
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• pp.1190-1196
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• 2014

본 논문은 넓은 고도 범위와 낮은 측정 오차를 갖는 주파수 변조 연속파(FMCW) 레이더 고도계의 설계 방안을 제안한다. 측정 고도의 동적 범위를 줄이기 위해 전파 고도계의 송신 경로에 광 지연선을 적용하여 넓은 고도 범위를 얻을 수 있다. 송신 전력과 수신단 이득을 제어하여 또한 수신 전력의 동적 범위를 줄일 수 있다. 더불어, 직접 디지털 합성기를 사용하여 변조 선형성을 향상시키고, 기준 클럭 신호를 위상 고정 루프의 옵셋(offset) 주파수로 사용하여 위상잡음을 최소화함으로써 낮은 고도 측정오차를 갖는다.

• 전자공학회논문지B
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• 제31B권10호
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• pp.73-81
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• 1994

It is AGC(Automatic Gain Control) amplifier to decide characteristics of IF(Intermediate Frequency) processing IC. When demodulated IF signal by PLL type demodulator, the amplitude of input singla should be maintained at a certain amplitude. The AGC amplifier is an important factor to achieve this condition. The AGC amplifier needs the wide dynamic range, the wide AGC range and better noise characteristics. We designed the AGC amplifier to satisfy these characteristics.

• 센서학회지
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• 제22권4호
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• pp.256-261
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• 2013

This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.