Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A $32{\times}33$ Photo-elements MOS Image Sensor

  • Published : 1987.07.03
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Abstract

A $32{\times}33$ MOS-type area image sensor has been fabricated. The blooming current is reduced to 1/14 by forming +p photocell in P-well instead of a simple p-type substrate. A shallow n+ junction is made to improve the sensitivity of photodiode on short wavelength. Bootstrapping circuit technique is applied to obtain high speed dynamic shift register. The shift register operates at up to 10MHz for 7V clock.

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