다층 배선 구조에서 Etchback 방식에 의한 층간 절연막의 평탄화

The planarization of interdielectric film by etchback process in multilevel metallization

Planarization in multilevel metallization is very important to smooth out topographic undulations by conductors, dielectrics, contacts, and vias. One of methods for planarizing interdielectrics, such as the etchback process of the double layer composed of the photoresist on the interdielectric low temperature oxide was introduced. The step heights of interdielectrics before and after etch-back process was measured by Scanning Electron Microscope, and the degree of planarization was analyzed, comparing the differences of the step heights. In this experiment, the degree of planarization was controlled up to about 0.9.