대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Laser Interferometry를 이용한 Solid Phase Epitaxial Regrowth에 관한 연구

A study of Solid Phase Epitaxial Regrowth of Silicon using Laser Interferometry

  • Park, Se-Geun (Gold Star Semiconductor, INC.) ;
  • Walser, R.M. (Department of C & E Engineering The University of Texas at Austin)
  • 발행 : 1987.07.03
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초록

A laser interferometry of very high spatial resolution was built to study the solid phase epitaxial regrowth of furnace-annealed silicon wafers. As boron concentration increases up to $1.0E20/cm^3$, regrowth rate increases, but pre-exponential term and activation energy are decreased.

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