대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

CO2 레이저 열처리에 의한 다결정 실리콘 Island의 재결정화

CO2 Laser Assisted Recrystallization of Polysilicon Island

  • 오민록 (서강 대학교 전자 공학과) ;
  • 안철 (서강 대학교 전자 공학과)
  • Oh, Min-Rok (Dept.of Elec. Eng., Sogang University) ;
  • An, Chul (Dept.of Elec. Eng., Sogang University)
  • 발행 : 1987.07.03
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The recrystallization of polysilicon layer deposited on Si was attemped by means of C02 laser annealing. The polysilicon layer was defined in small island patterns ($50{\mu}m{\times}200{\mu}m$) by means of photolithography prior to the annealings. After the annealing an increase of grain size up to about 50um was obtained.

키워드