대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.542-545
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- 1987
RAPID THERAL PROCESS를 응용한 THIN DIELECTRIC FILM의 전기적 특성에 관한 연구.
ELECTRICAL CHARACTERISTICS OF THIN DIELECTRIC FILMS PREPARED BY RAPID THERMAL PROCESS
- Lee, Ang-Goo (SAMSUNG SEMICONDUCTOR LABORATORY) ;
- Park, Seong-Sik (SAMSUNG SEMICONDUCTOR LABORATORY) ;
- Choi, Jin-Seog (SAMSUNG SEMICONDUCTOR LABORATORY) ;
- Rhieu, Ji-Hyo (SAMSUNG SEMICONDUCTOR LABORATORY)
- Published : 1987.07.03
Abstract
THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.
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