CAPACITANCE 증가를 위한 STACKED FILM의 전기적 특성 연구

ELECTRICAL CHARACTERISTICS OF STACKED FILM TO INCREASE CAPACITANCE

TO INCREASE THE CELL CAPACITANCE Of SMALL GEOMETRY DRAMS. HIGH DIELECTRIC MATERIAL HAS BEEN USED RECENTLY. THE PURPOSE Of THIS WORK IS TO INVESTIGATE THE STRUCTURAL AND ELECTRICAL CHARACTERISTICS Of SiO2/Si3N4/SiO2 STACKED FILM UTILIZING HIGH DIELECTRIC MATERIAL Si3N4(${\epsilon}=7.5$). IN RESULT, THE DIELECTRIC CONSTANT Of STACKED FILM IS 4.0 - 5.0 AND CAPACITANCE AND BREAKDOWN FIELD WERE MORE INCREASED THAN THOSE Of SiO2 FILM.