Si-oxides가 ZnO varistor의 항복특성에 미치는 영향

Effect of Si-oxides on the breakdown properties of ZnO varistor

  • 김종문 (한양대학교 재료공학과) ;
  • 진희창 (한양대학교 재료공학과) ;
  • 마재평 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과)
  • 발행 : 1987.07.03

초록

To enhance the breakdown properties of low voltage-oriented ZnO varistor, the samples were fabricated with the amounts of si-oxides and the sintering conditions. And then, to lower the breakdown voltage the $TiO_2$-added samples were fabricated. We investigated the nonlinear exponent, the nonlinear resistance and the V-I characteristics of samples. And we discussed with microstructures by use of SEM and the position of Si by EDS. Si-oxides, especially, largely enhanced the nonlinear exponent. In this case optimum sintering condition was $1200-1250^{\circ}C$-1hr and $TiO_2$ addition lowered the breakdown voltage.

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