대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.561-564
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- 1987
APCVD에 의란 BPSG 막질특성에 관란 연구
A Study on Characteristics of Borophosphosilicate Gloss deposited by At.ospheri, Pressure Chemical Vapor Deposition
- Kim, Eui-Song (Samsung Semiconductor & Telecommunications Co., Ltd) ;
- Lee, Chul-Jin (Samsung Semiconductor & Telecommunications Co., Ltd) ;
- Rhieu, Ji-Hyo (Samsung Semiconductor & Telecommunications Co., Ltd) ;
- Song, Sung-Hae (Samsung Semiconductor & Telecommunications Co., Ltd)
- 발행 : 1987.07.03
초록
The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.
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