Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Determination of Energy Distribution of Interface State Density in the MNOS Memory Device

MNOS 기억소자의 계면상태밀도의 에너지 분포의 결정

  • 한태현 (광운대학교 대학원 전자재료공학과) ;
  • 강창수 (광운대학교 대학원 전자재료공학과) ;
  • 박종하 (광운대학교 대학원 전자재료공학과) ;
  • 서광열 (광운대학교 대학원 전자재료공학과)
  • Published : 1988.10.01
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Abstract

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

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