Abstract
Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.