Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

A Study on Temperature Dependence of the Electron Transport Properties of Gallium Arsenide using a Monte Carlo Method

Monte Carlo Method을 이용한 GaAs 전자전송특성의 온도의존성에 관한 연구

  • Yoon, J.S. (Dept. of Electric Eng., Dongguk University) ;
  • Ha, S.Ch. (Dept. of Electric Eng., Dongguk University)
  • 윤진섭 (동국대학교 전기공학과) ;
  • 하성철 (동국대학교 전기공학과)
  • Published : 1988.05.27
Download PDF
⟨ Previous Next ⟩

Abstract

Electron transport properties of gallium arsenide in an electric field are simulated the drift velocity, Mn.energy, electron occupation, mobility in the temperature range $77^{\circ}K-500^{\circ}K$ using a Monte Carlo Method. Therefore it can be used for a GaAs MESFET design.

Keywords