대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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- Pages.88-92
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- 1990
A Self-Consistent Analytic Threshold Voltage Model for Thin SOI N-channel MOSFET
- Choi, Jin-Ho (Department of Electrical Engineering Korea Advanced Institute of Science and Technology) ;
- Song, Ho-Jun (Department of Electrical Engineering Korea Advanced Institute of Science and Technology) ;
- Suh, Kang-Deog (Department of Electrical Engineering Korea Advanced Institute of Science and Technology) ;
- Park, Jae-Woo (Department of Electrical Engineering Korea Advanced Institute of Science and Technology) ;
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Kim, Choong-Ki
(Department of Electrical Engineering Korea Advanced Institute of Science and Technology)
- 발행 : 1990.11.17
초록
An accurate analytical threshold model is presented for fully depleted SOI which has a Metal-Insulator-Semiconductor-Insulator-Metal structure. The threshold voltage is defined as the gate voltage at which the second derivative of the inversion charge with respect to the gate voltage is maximum. Therefore the model is self-consistent with the measurement scheme. Numerical simulations show good agreement with the model with less than 3% error.
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