반도체(半導體) DI switching소자(素子)의 전기적(電氣的) 특성(特性)

Electrical Characteristics of Semiconductor DI Switching Devices

Double Injection Switching Devices consist of $P^+$ and $n^+$ contact separated by a near intrinsic Semiconductor region containing deep trap. A V-Groove Double Injection Switching Devices were proposed for high voltage performance and Optical gating scheme. The experimental result to demonstrate the feasibility of these devices (Planar type, V-Groove type, Injection Gate mode, Optical Gate mode) for practical application are described.