비정질 실리콘 박막 트랜지스터의 회로 해석 모델링

Circuit Modeling of Amorphous Silicon Thin Film Transistor

  • 발행 : 1990.11.17

초록

We develop the analytical model of the static and dynamic characteristics of hydrogenated amorphous silicon thin film transistors. It is found out that, compared with the conventional MOS model, our a-Si model has been in better agreement with experimental static and dynamic results. It may be also suggested that our a-Si model is suitable for incorporation into a widely used curcuit simulation.

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