Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Retention Characteristics with the Charge Injection Conditions in the Nonvolatile MNOS Memories

전하주입조건에 따른 비휘발성 MNOS 기억소자의 기억유지특성에 관한 연구

  • Lee, Kyoung-Leun (Dept. of Elctronic Materials Engineering, Kwangwoon Univ.) ;
  • Yi, Sang-Bae (Dept. of Elctronic Materials Engineering, Kwangwoon Univ.) ;
  • Lee, Sang-Eun (Dept. of Elctronic Materials Engineering, Kwangwoon Univ.) ;
  • Seo, Kwang-Yell (Dept. of Elctronic Materials Engineering, Kwangwoon Univ.)
  • 이경륜 (광운대학교 전자재료공학과) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 이상은 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • Published : 1993.07.18
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Abstract

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

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