Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.11a
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- Pages.243-245
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- 1993
A Negative Curvature effect for breakdown voltage of lateral junction on SOI
SOI 수평형 접합의 항복 전압 향상을 인한 Negative Curvature(NC) 효과
- Byun, Dae-Seok (Seoul National University) ;
- Choi, Yearn-Ik (Ajou University) ;
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Han, Min-Koo
(Seoul National University)
- Published : 1993.11.26
Abstract
The negative curvature effect on the breakdown voltage of p-n junction, which may realize 1-D breakdown voltage due to the lower peak electric field at the junction, is proposed and verified by the fabrication of lateral diode on Silicon-on-Insulator (SOI) together with MEDICI simulation. The experimental and simulation results show good agreements with the theoretical expectation. The proposed method is effectively applicable to the lateral, especially on SOI, power devices.
Keywords