헬리콘 플라즈마 물성특성 및 식각응용에 관한 연구

A Study on the Propensities of Helicon Plasma and Application for Etching

  • 이병일 (서울대학교 공과대학 전기공학과) ;
  • 도현호 (서울대학교 공과대학 전기공학과) ;
  • 양일동 (서울대학교 공과대학 전기공학과) ;
  • 황기웅 (서울대학교 공과대학 전기공학과)
  • Lee, Byoung-Ill (Department of Electrical Engineering, Seoul National University) ;
  • Do, Hyun-Ho (Department of Electrical Engineering, Seoul National University) ;
  • Yang, Ill-Dong (Department of Electrical Engineering, Seoul National University) ;
  • Whang, Ki-Woong (Department of Electrical Engineering, Seoul National University)
  • 발행 : 1993.11.26

초록

A high plasma density of $10^{12}cm^{-3}$ can be produced at the pressure of few mTorr with R. F input power of 300-400W. A radially uniform plasma to a radius of 7cm at the substrate was produced at the pressure of 1 mTorr. The electron density and temperature were confirmed with double Langmuir probe, $\mu$-wave interferometer. It has bee found that the dispersion relation N/B=constant not be applied at the low R.F input power(<600W) but can be applied at high R.F input power(>600W).

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