Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1996.06a
- /
- Pages.96-96
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- 1996
Formation of TiN barrier layer by the two-step rappid thermal conversion process for Cu Metallization
- Kim, Youn-Tae (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
-
Jun, Chi-Hoon
(Semiconductor Technology Division, Electronics and Telecommunications Research Institute)
;
-
Lee, Jin-Ho
(Semiconductor Technology Division, Electronics and Telecommunications Research Institute)
;
- Baek, Jong-Tae (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
- Yoo, Hyung-Joun (Semiconductor Technology Division, Electronics and Telecommunications Research Institute)
- Published : 1996.06.01
Abstract
Keywords