Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- Semi Annual
Domain
- Physics > Optics
1996.06a
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Kim, Moon-Deock;Jeon, Min-Hyon;Park, Hae-Sung;Kim, Bong-Jin;Ji, Jeong-Keun;Oh, Eun-Soon;Lee, Sang-Dong;Kim, Tae-Il 29
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Ko, N.H;Cho, K.S;Eom, K.S;Kim, C.B;Park, S.H;Kang, T.W;Han, J.W;Hong, C.H;Kim, D.H;Lim, J.Y;Won, S.H;Jung, K.S. 34
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Park, Seung-Ho;Jo, Hak-Dong;Won, Sang-Hyeon;Jeong, Gwan-Su;Go, Nam-Hun;Eom, Gi-Seok;Lee, Yeon-Hwan;Gang, Tae-Won 38
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Park, Y.J.;Kim, S.I.;Kim, E.K.;Han, I.K.;Min, S.K.;O'Keeffe, P.;Mutoh, H.;Hirose, S.;Hara, K.;Munekata, H.;Kukimoto, H. 40
Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of$GaAs_2$ . In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at$300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at$RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was$7.5{\times}lO^{-4}$ Torr during the nitridations at$N_2$ flow rate of 10 seem.(omitted)mitted) -
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Heo, Yu-Beom;Han, Myeong-Su;U, Yong-Deuk;Lee, Hae-Ik;Song, Byeong-Gwon;Baek, Un-Hyeong;Gang, Tae-Won 54
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Song, Byeong-Gwon;Han, Myeong-Su;Heo, Yu-Beom;Baek, Un-Hyeong;Gang, Tae-Won;Jeong, Yong-Taek;Kim, Heung-Guk;Kim, Jae-Muk;Kim, Gwang-Ju 56
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Baek, Un-Hyeong;Han, Myeong-Su;Kim, Heung-Guk;Kim, Jae-Muk;Song, Byeong-Gwon;Heo, Yu-Beom;Kim, Deuk-Nyeong;Gang, Tae-Won;Jeong, Yong-Taek 58
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Park, Jong Rak;Lee, Jae Yong;Kim, Hyun Su;Um, Ki Young;Shin, Yun Sup;Han, Ki Ho;Byun, Jae Oh;Park, Hee Su 65
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Park, Ju-Sang;Gwon, O-Gwan;Kim, Yeong-Gwan;Son, Byeong-Cheong;Kim, Yong-In;Choe, Jong-Seon;Park, Mi-Gyeong;Sin, Dong-Myeong;Gang, Do-Yeol 77
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Kim, Kun-Ho;Im, Tae-Gyun;Park, Jeng-Hwan;Lee, Jeoung-Ju;Kim, Hyun-Soo;Kang, Jung-Soo;Lee, Jae-Hee;Jeong, Jae-In;Hong, Jae-Hwa;Choi, Chi-Kyu 109
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Choi, Young-Joon;Kim, Sung-Ryong;Jang, Hong-Gui;Choi, Won-Kook;Jung, Hyung-Jin;Koh, Seok-Keun 124
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AntonovaT.B.;BougrovG.E.;BougrovaA.I.;Choi, W.K.;GontcharovL.A.;Jung, H.J.;Koh, S.K.;KondraninS.G.;KralkinaE.A.;SitinE.S.;ObukhovV.A 151
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Park, Sung-Chul;Kim, Sung-Ryong;Choi, Young-Joon;Song, Jun-Seob;Song, Seok-Kyun;Koh, Seok-Keun 157
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임피던스 pprobe와 고전압 pprobe를 이용하여 평판형 유도결합 플라즈마에서의 용 량 결합 성분을 구하였으며, 용량 결합 성분에 의해서 생기는 석영창의 손상을 4극 질량 분 석기(quadruppole mass sppectrometer)를 이용하여 확인하였다. 또한 축방향 외부 자장을 가 하였을 경우 용량 결합 성분이 상당량 감소하여 석영창의 손상이 거의 없음을 확인하였다.
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ppt/Ti/SiO2/Si 기판상에 고주파 마그네트론 스퍼터링 방식으로 ppZT 박막[두 께:3000
$\AA$ ]을 증착하고 RTA 방식으로 후속 열처리[열처리온도:550~$650^{\circ}C$ ]를 실시하여 직 경 0.2mm 소자의 FECApps(ferroelectric cappacitors)를 제작하였다. 증착된 ppZT 박막을 강 유전성 pperovskite 결정상으로 만들기 위해 ppZT 박막의 열처리조건을 연구하였으며, 열처리 방식에 따른 ppZT 박막의 결정특성(상형상, 형상관찰, 성분분석 등)과 커패시터 소자의 전기 적 특성($\varepsilon$ r,tan$\delta$ ,pp-E hysteresis curves, 누설전류 등)을 비교, 분석하였다. -
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적외선 센서의 재료로 활용되고 있는 ppLT 박막(두께:8000~9000
$\AA$ )을 ppt/MgO(100)의 하부 구조상에 50$0^{\circ}C$ 및$600^{\circ}C$ 에서 스퍼터링 증착하여 결정성 및 전기적 특성을 조사하였다.$600^{\circ}C$ 로 in-situ 성장된 ppLT 박막은 c-축(00l) 방향으로 배향 성장되었 고, 비유전상수(r)와 유전정접(tan)의 값이 10kHz~100kHz의 주파수에서$\varepsilon$ r≒35와 tan$\delta$ ≒ 0.01로 나타났다. 잔류분극량(2ppr)과 초전계수(${\gamma}$ )는 상온부근에서 2ppr≒5$\mu$ C/cm2,${\gamma}$ ≒4$\times$ 10-8C/cm2.$^{\circ}C$ 로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.