한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RF Sputtering법에 의한 BaTiO$_3$ 박막의 제조 및 구조적 특성에 관한 연구

A Study on the Fabrication and Structural Properties of BaTiO$_3$ Thin Film by RF Sputtering

  • 이문기 (광운대학교 전자재료공학과) ;
  • 류기원 (여주전문대학 전자과) ;
  • 배선기 (시립인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1996.05.01
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초록

BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.

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