한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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IC 칩 패키지용 PECVD 실리콘 질화막에 관한 연구

A Study on PECVD Silicon Nitride Thin Films for IC Chip Packaging

  • 조명찬 (동서대학교 화학공학과) ;
  • 정귀상 (동서대학교 메카트로닉스공학과)
  • 발행 : 1996.05.01
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초록

Mechanical properties of Plasma-Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin film was studied to determine the feasibility of the film as a passivation layer over the aluminum bonding areas of integrated circuit chips. Ultimate strain of the films in thicknesses of about 5 k${\AA}$ was measured using four-point bending method. The ultimate strain of these films was constant at about 0.2% regardless of residual stress. Intrinsic and residual stresses of these films were measured and compared with thermal shock and cycling test results. Comparison of the results showed that more tensile films were more susceptible to crack- induced failure.

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