Electrical and Optical Characteristics of X/40/60 PLZT Thin Films by Sol-Gel Processing

Sol-Gel 법에 의한 X/40/60 PLZT 박막의 전기 및 광학 특성

X/40/60 PLZT thin films were prepared by sol-gel processing and annealed by rapid thermal annealing(RTA). X/40/60 PLZT thin films were crystallized at 75$0^{\circ}C$ for 5min by RTA. Hysteresis curves were narrowed and coercive field was decreased from 50kV/cm to 31.2 kV/cm and remnant polarization was also decreased from 14.3$\mu$C/$\textrm{cm}^2$ to 6.72$\mu$C/$\textrm{cm}^2$ as La mol% increased. Dielectric constanat and optical transmittance were increased with increasing La mol%.