Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Optical Properties of Te-Ge-Sb Thin Films with Crystallization

Te-Ge-Sb계 박막의 결정화에 따른 광학적 특성

  • Chung, Hong-Bay (Dept. of Electronic Materials Eng., Kwangwoon Univ.) ;
  • Im, Sook (Dept. of Electronic Materials Eng., Kwangwoon Univ.) ;
  • Lee, Young-Jong (Institute of New Technology, Kwangwoon Univ.,Dept. of Electronic Eng.,Yeoju Junior College)
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 임숙 (광운대학교 전자재료공학과) ;
  • 이영종 (광운대학교 신기술연구소 여주전문대학 전자과)
  • Published : 1996.11.01
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Abstract

In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

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