대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

역 이중채널 구조를 이용한 전력용 AlGaAs/InGaAs/GaAs P-HEMT의 특성

Characteristics of inverted AlGaAs/InGaAs/GaAs power P-HEMTs with double channel

  • 안광호 (포항공과대학교 전자전기공학과) ;
  • 정영한 (포항공과대학교 전자전기공학과) ;
  • 배병숙 (포항공과대학교 전자전기공학과) ;
  • 정윤하 (포항공과대학교 전자전기공학과)
  • Ahn, Kwang-Ho (Dep. of Electronic & Electrical Engineering, POSTECH) ;
  • Jeong, Young-Han (Dep. of Electronic & Electrical Engineering, POSTECH) ;
  • Bae, Byung-Suk (Dep. of Electronic & Electrical Engineering, POSTECH) ;
  • Jeong, Yoon-Ha (Dep. of Electronic & Electrical Engineering, POSTECH)
  • 발행 : 1996.11.16
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초록

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

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