대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

고정된 소자치수를 갖는 전력 MOSFET의 최적화

Optimization of the Power MOSFET with Fixed Device Dimensions

  • 최연익 (아주대학교 전기전자공학부) ;
  • 황규한 (아주대학교 전기전자공학부) ;
  • 박일용 (아주대학교 전기전자공학부)
  • Choi, Yearn-Ik (School of Electrical & Electronics Eng., Ajou University) ;
  • Hwang, Kue-Han (School of Electrical & Electronics Eng., Ajou University) ;
  • Park, Il-Yong (School of Electrical & Electronics Eng., Ajou University)
  • 발행 : 1996.11.16
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초록

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

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