Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Photoluminescence study in GaAs/AlGaAs multi-quantum well structure by hydrogen passivation

수소화 처리에 의한 GaAs/AIGaAs 다중양자우물의 PL 연구

  • Park, Se-Ki (School of Electrical and Computer Engineering, Inha University) ;
  • Lee, Cheon (School of Electrical and Computer Engineering, Inha University) ;
  • Jung, Min (Department of Physics, Kwangwoon University)
  • 박세기 (인하대학교 전기.전자.컴퓨터공학부) ;
  • 이천 (인하대학교 전기.전자.컴퓨터공학부) ;
  • 정민 (광운대학교 물리학과)
  • Published : 1997.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.

Keywords