Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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NONUNIFORMITY OF GRAIN BOUNDARIES IN ZnO VARISTORS

ZnO 바리스터에서 입계의 전기적 불평등성에 관한 연구

  • 한세원 (전기연구소 애자. 피뢰기기술연구팀 ,한양대학교) ;
  • ;
  • 조한구 (전기연구소,전기재료부,애자.피뢰기기술연구팀) ;
  • 김형식 (전기연구소,전기재료부,애자.피뢰기기술연구팀) ;
  • 강형부 (한양대학교, 전기공학과)
  • Published : 1997.11.01
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Abstract

The nonuniformity of electrical characteristics of grain boundaries in ZnO varistors wei\ulcorner systematically analyzed. The high nonuniformity exist in barrier voltages and nonlinearity coefficients among different grain boundaries. The barrier voltages have normal distributions, only a few grain boundaries were electrically active, and the grain boundaries can be simply classified into good, bad, and ohmic ones according to the electrical characteristics of grain boundaries. The average barrier voltage is equal to 3.3 V by direct method, but it is only 2.3 V by indirect method. There is a high difference between the barrier voltages by direct and indirect measurement methods. The A1$_2$O$_3$ dopants affect the electrical characteristics of grain boundaries by changing the electron status In grain boundary and intragrain.

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